Platinum diselenide (PtSe₂) field‐effect transistors with ultrathin channel regions exhibit p‐type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is raised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe₂ surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe₂ film provides an effective route for modulating the density of carriers and the optical properties of the material.

The fabrication of a graphene–silicon (Gr-Si) junction involves the formation of a parallel metal–insulator–semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by Si₃N₄, produces a Gr-Si device, in which the parallel MIS consists of a Gr-Si₃N₄-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 10⁴. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height (SBH) at zero bias, φ_b0 = 0.24 eV, the effective Richardson’s constant, A* = 7 × 10^–10 AK^–2 cm^–2, and the diode ideality factor n = 2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity of up to 350 mA/W and an external quantum efficiency (EQE) of up to 75% are achieved in the 500–1200 nm wavelength range. Decreases in responsivity to 0.4 mA/W and EQE to 0.03% are observed above 1200 nm, which is in the IR region beyond the silicon optical band gap, in which photoexcitation is driven by graphene. Finally, a model based on two parallel and opposite diodes, one for the Gr-Si junction and the other for the Gr-Si₃N₄-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS ₂ ) field effect transistors. The presence of defects and point vacancies in the MoS ₂ crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS ₂ surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.