This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.

Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in n-type structures and impurity breakdown in a longitudinal electric field in p-type structures. The emission spectra are obtained. Emission is observed at low temperatures and shown to be determined by optical transitions between impurity states and transitions between the band and impurity states. Upon optical interband pumping, the impurity states are depopulated due to the recombination of electron-hole pairs with the involvement of impurities, while, in an electric field, the impurity states are depopulated due to impact ionization.

We report the growth of dilute nitride GaNAs and GaInNAs core-multishell nanowires (NWs) using molecular beam epitaxy assisted by a plasma source. Using the self-catalyst vapor–liquid–solid growth mode, these NWs were grown on Si(111) and silicon on insulator substrates. The GaNAs and GaInNAs shells contain nitrogen up to 3%. Axial cross-sectional scanning transmission electron microscopy measurements and energy-dispersive x-ray spectrometry confirm the formation of the core-multishell NW structure. We obtained high-quality GaNAs NWs with nitrogen compositions up to 2%. On the other hand, GaNAs containing 3% nitrogen, and GaInNAs NWs, show distorted structures; moreover, the optical emissions seem to be related to defects. Further optimisations of the growth conditions will improve these properties, promising future applications in nanoscale optoelectronics.

Dispersion characteristics of hybrid surface plasmon-phonon-polaritons (SPPhPs) on the air/polar semiconductor interface were investigated by means of shallow surface relief grating using emission spectroscopy methods. A set of grating structures with optimal 1 µm depth and periods from 8 to 22 µm was developed on a heavily-doped GaN crystal. The SPPhPs were excited by thermal heating or electrical biasing of the samples which radiated directive polarized features in an extremely narrowband spectrum range. Detailed analysis of damping factors and propagation losses revealed maximum values of quality factor and spatial coherence of hybrid SPPhPs modes. Highest quality factor was found to be practically independent on the period of the shallow grating, as it was always detected near the frequency of transverse optical phonon, demonstrating values as high as 88 and 200 in experiment and theory, respectively. Meanwhile, the largest values of coherence length strongly depended on the grating as the propagation losses of hybrid SPPhP modes showed a tendency to accumulate with the wavevector increase. The sample with 22 µm grating period demonstrated the highest coherence of hybrid polaritons with the experimental (theoretical) coherence length values as high as 1.6 mm (2.3 mm).

The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures....