We demonstrate the potential of highly-doped semiconductor epilayers as building blocks for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy and characterized by Hall measurements and optical techniques. We show that the plasma frequency of our material can be controlled across a broad range of mid-infrared frequencies. Subwavelength disks are fabricated out of our material, and localized plasmonic resonances are observed from these structures. Experimental results are compared to both numerical simulations and a simple quasistatic dipole model of our disks with good agreement.

We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of the dielectric layer. The absorption resonance is shown to be largely polarization-independent and angle-invariant. Upon heating, we observe selective thermal emission from our materials. Experimental data is compared to an analytical model of our structures with strong agreement.

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V₂-VI₃ family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.