Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.

Organic light-emitting diodes (OLEDs) are promising for displays and lighting technologies because of their excellent advantages, such as high efficiency, high luminance, low power consumption, light weight, and flexibility. In recent years, ultrathin emitting nanolayers (UENs) have been used to develop OLEDs without the doping technique, which can simplify device structure, reduce material loss, achieve good exciton utilization, and realize comparable performance to doped devices such as the external quantum efficiency of 28.16%, current efficiency of 63.84 cd/A, and power efficiency of 76.70 Lm/W for white OLEDs. In this review, we comprehensively summarize the recent progress in the field of UEN-based OLEDs. Firstly, the host–guest-doped OLEDs and doping-free UEN-based OLEDs are compared. Then, various effective approaches for designing UEN-based OLEDs are presented, including both monochromatic and white devices. In particular, the properties of materials, the design of device structures, and the main working mechanisms of UEN-based OLEDs are highlighted. Finally, an outlook on the future development of UEN-based OLEDs is provided.