This article presents a new micro-light-emitting diode (LED) pixel circuit driven by the digital pulsewidth modulation (PWM) method, in which the threshold voltage compensation of the driving thin-film transistor (TFT) is included. A scan driver integrated by metal oxide (MO) TFTs is also designed to provide the scan signals for pixel circuits array. A micro-LEDs array with $76\,\, \times $ BBB $\times \,\,78$ and a scan driver with 80 stages are simultaneously fabricated by MO TFTs backplane with back-channel etch (BCE) structure. A respective micro-LED display is consequently realized by a peripheral driving system based on a field-programmable gate array (FPGA), which is used as a core control unit to synchronize the scan signals with the data signals. It is shown that the micro-LED in the pixel circuit can operate at a constant current even at the 5- $\mu \text{s}$ pulsewidth of the emission (EM) signal. The micro-LED display can achieve 256 linear grayscales with an approximately 60 Hz flash rate under the minimum pulsewidth of 40 $\mu \text{s}$ of EM signal.

This article presents a new uncompensated analog pulsewidth modulation (PWM) pixel circuit employing pull-up control for micro-light-emitting diode (LED) display. The time of emitting light for the micro-LED working at the constant current is modulated by the analog data voltage. A compensated pixel circuit is also further developed to improve the display uniformity by compensating the threshold voltage shift of PWM thin-film transistor (TFT) and driving TFT. Based on the back-channel etch (BCE) metal oxide TFTs process, $16\times $ GGG $\times29$ LED array with the uncompensated pixel circuit and 16 $\times {G}\,\,\times15$ LED array with the compensated pixel circuit are simultaneously fabricated on the same glass substrate. Compared with the uncompensated pixel circuit array, the display uniformity of the compensated pixel circuit array is improved from 74% to 88%.

Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.

In this letter, for both non-degenerate conduction and degenerate conduction, a new compact model of amorphous oxide semiconductor thin-film transistors is developed. The contributions of the trapped and free charges are considered in the closed-form solutions of surface potential and drain current under a degenerate regime. Furthermore, proof of the model's accuracy has been obtained by comparisons with numerical results and measured data. The proposed scheme is capable of capturing real-device dc characteristics and of maintaining high computational efficiency, which provides a better platform to develop advanced surface-potential-based model for circuit simulation.