Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.

The construction of heterojunctions has been widely applied to improve the gas sensing performance of composites composed of nanostructured metal oxides. This review summarises the recent progress on assembly methods and gas sensing behaviours of sensors based on nanostructured metal oxide heterojunctions. Various methods, including the hydrothermal method, electrospinning and chemical vapour deposition, have been successfully employed to establish metal oxide heterojunctions in the sensing materials. The sensors composed with the built nanostructured heterojunctions were found to show enhanced gas sensing performance with higher sensor responses and shorter response times to the targeted reducing or oxidising gases compare with those of the pure metal oxides. Moreover, the enhanced gas sensing mechanisms of the metal oxide-based heterojunctions to the reducing or oxidising gases are also discussed, with the main emphasis on the important role of the potential barrier on the accumulation layer.