We study the structural and chemical transformations induced by focused laser beam in GaAs nanowires with an axial zinc-blende/wurtzite (ZB/WZ) heterostructure. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For both the components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaOx. The latter compound is responsible for the appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under an increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of β-Ga2O3 nanocrystals proceed on the surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in a visible range of 1.7–2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with the formation of β-Ga2O3 nanocrystals occurs. Observed transformation of WZ-GaAs to β-Ga2O3 nanocrystals presents an available way for the creation of axial and radial heterostructures ZB-GaAs/β-Ga2O3 for optoelectronic and photonic applications.
Research regarding ways to increase solar cell efficiency is in high demand. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. C-AFM I–V curves were measured for wurtzite p-GaAs NW grown on p-Si substrate. Numerical simulations were performed considering piezoresistance and piezoelectric effects. Solar cell efficiency reduction of 50% under a −0.5% strain was observed. The analysis demonstrated the presence of an additional fixed electrical charge at the NW/substrate interface, which was induced due to mismatch between the crystal lattices, thereby affecting the efficiency. Additionally, numerical simulations regarding the p-n GaAs NW solar cell under uniaxial compression were performed, showing that solar efficiency could be controlled by mechanical deformation and configuration of the wurtzite and zinc blende p-n segments in the NW. The relative solar efficiency was shown to be increased by 6.3% under −0.75% uniaxial compression. These findings demonstrate a way to increase efficiency of GaAs NW-based solar cells via uniaxial mechanical compression.