Topics of photoexcited carrier dynamics in quantum dot solar cells are reviewed and discussed for the first time.

A high‐quality perovskite photoactive layer plays a crucial role in determining the device performance. An additive engineering strategy is introduced by utilizing different concentrations of N,1‐diiodoformamidine (DIFA) in the perovskite precursor solution to essentially achieve high‐quality monolayer‐like perovskite films with enhanced crystallinity, hydrophobic property, smooth surface, and grain size up to nearly 3 µm, leading to significantly reduced grain boundaries, trap densities, and thus diminished hysteresis in the resultant perovskite solar cells (PSCs). The optimized devices with 2% DIFA additive show the best device performance with a significantly enhanced power conversion efficiency (PCE) of 21.22%, as compared to the control devices with the highest PCE of 19.07%. 2% DIFA modified devices show better stability than the control ones. Overall, the introduction of DIFA additive is demonstrated to be a facile approach to obtain high‐efficiency, hysteresis‐less, and simultaneously stable PSCs.

A strategy for efficaciously regulating perovskite crystallinity is proposed by using a volatile solid glycolic acid (HOCH₂COOH, GA) in an FA_0.85MA_0.15PbI₃ (FA: HC(NH₂)₂; MA: CH₃NH₃) perovskite precursor solution that is different from the common additive approach. Accompanied with the first dimethyl sulfoxide sublimation process, the subsequent sublimation of GA before 150 °C in the FA_0.85MA_0.15PbI₃ perovskite film can artfully regulate the perovskite crystallinity without any residual after annealing. The improved film formation upon GA modification induced by the strong interaction between GA and Pb²⁺ delivers a champion power conversion efficiency (PCE) as high as 21.32%. In order to investigate the role of volatility in perovskite solar cells (PSCs), nonvolatile thioglycolic acid (HSCH₂COOH, TGA) with a similar structure to GA is utilized as an additive reference. Large perovskite grains are obtained by TGA modification but with obvious pinholes, which directly leads to an increased defect density accompanied by a decline in PCE. Encouragingly, the champion PCE achieved for GA‐based PSC device (21.32%) is almost 13% or 20% higher than those of the control device or TGA‐based device. In addition, GA‐modified PSCs exhibit the best stability in light‐, thermal‐, and humidity‐based tests due to the improved film formation.