Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga₂O₃ with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga₂O₃ and Ga₂O₃(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga₂O₃ formation. The sensor responses of all Ga₂O₃(Sn) samples to CO and NH₃ have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga₂O₃ phases and segregation of SnO₂ on the surface of Ga₂O₃(Sn) grains.

New viral infections, due to their rapid spread, lack of effective antiviral drugs and vaccines, kill millions of people every year. The global pandemic SARS-CoV-2 in 2019–2021 has shown that new strains of viruses can widespread very quickly, causing disease and death, with significant socio-economic consequences. Therefore, the search for new methods of combating different pathogenic viruses is an urgent task, and strategies based on nanoparticles are of significant interest. This work demonstrates the antiviral adsorption (virucidal) efficacy of nanoparticles of porous silicon (PSi NPs) against various enveloped and non-enveloped pathogenic human viruses, such as Influenza A virus, Poliovirus, Human immunodeficiency virus, West Nile virus, and Hepatitis virus. PSi NPs sized 60 nm with the average pore diameter of 2 nm and specific surface area of 200 m²/g were obtained by ball-milling of electrochemically-etched microporous silicon films. After interaction with PSi NPs, a strong suppression of the infectious activity of the virus-contaminated fluid was observed, which was manifested in a decrease in the infectious titer of all studied types of viruses by approximately 10⁴ times, and corresponded to an inactivation of 99.99% viruses in vitro. This sorption capacity of PSi NPs is possible due to their microporous structure and huge specific surface area, which ensures efficient capture of virions, as confirmed by ELISA analysis, dynamic light scattering measurements and transmission electron microscopy images. The results obtained indicate the great potential of using PSi NPs as universal viral sorbents and disinfectants for the detection and treatment of viral diseases.

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (∼100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1–0.2 $e/\sqrt{\text{Hz}}$ from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Anodization of aluminum with a pre-patterned surface is a promising approach for preparing anodic aluminum oxide (AAO) films with defect-free pore arrangement. Although pronounced effects of crystallographic orientation of Al on the AAO structure have been demonstrated, all current studies on the anodization of pre-patterned aluminum consider the substrate as an isotropic medium and, thus, do not consider the azimuthal orientation of the pattern relative to the basis vectors of the Al unit cell. Here, we investigate the interplay between the azimuthal alignment of the pore nuclei array and the crystallographic orientation of aluminum. Al(100) and Al(111) single-crystal substrates were pre-patterned by a Ga focused ion beam and then anodized under self-ordering conditions. The thickness-dependent degree of pore ordering in AAO was quantified using statistical analysis of scanning electron microscopy images. The observed trends demonstrate that the preferred azimuthal orientation of pore nuclei rows coincides with the directions in the Al unit cell, which is favorable for creating AAO with a high degree of pore ordering. In the case of an unspecified azimuthal orientation of the pore nuclei array, crystallography-affected disorder within the AAO structure occurs with increasing film thickness. Our findings have important implications for preparing defect-free porous films over 100 µm in thickness that are crucial for a variety of AAO applications, e.g., creating metamaterials and 2D/3D photonic crystals.