We employ strain engineering coupled with optical regulation to construct an ultrasensitive 2D In₂S₃ photodetector.

Cation-disordered Zn(Cu)–Si–P family materials demonstrate better Li-storage performance than the cation-ordered ZnSiP ₂ phase due largely to faster electronic and ionic conductivity and better tolerance to volume change during cycling, as confirmed by DFT calculations and experimental measurements.

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX₃ (X = Br, I) monolayers.