Experimental results on thermo-optical induced modulation in a silicon etalon at 1.5/m are reported. The measurements have also allowed an accurate determination of the thermooptic effect in silicon at this wavelength.

The temperature dependence of the thermo-optic coefficient for crystalline silicon has been measured in the temperature range between room temperature and 550 K at the wavelength of 1523 nm by means of an interferometric technique. This technique, which requires a very simple experimental setup, is based on the observation of the fringe pattern produced by temperature changes in a Fabry–Perot resonator. Measurement results indicate that the thermo-optic coefficient is independent on the sample doping and crystal plane orientation. The experimental data appear to be in agreement with the few values reported to date at this important wavelength. The temperature dependence of the excitonic band gap is also calculated by fitting these data with a recently introduced model of $\mathrm{\partial n/\partial T.}$

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Silicon-on-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics. These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems.

A novel optical label-free bio-sensing platform based on a new class of resonances supported in a photonic crystal metasurface is reported herein. Molecular binding is detected as a shift in the resonant wavelength of the bound states in the continuum of radiation modes. The new configuration is applied to the recognition of the interaction between protein p53 and its protein regulatory partner murine double minute 2 (MDM2). A detection limit of 66 nM for the protein p53 is found. The device provides an excellent interrogation stability and loss-free operation, requires minimal optical interrogation equipment and can be easily optimized to work in a wide wavelength range.

The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC. The adopted technique is very simple and is based on the observation of the periodicity of the signal transmitted, at the desired wavelength, by an étalon made of the material under test, when it experiences a temperature variation. The values of ∂n/∂T measured in InP and GaAs at room temperature are in agreement with previously reported ones, but increase with temperature with a weak quadratic dependence. SiC conversely shows a lower thermo-optic coefficient (2.77×10−5 K−1) at 300 K, which, however, doubles for a 300 K temperature increase.