Atomic ordering in Al melts induced by liquid/substrate interface with Ti solute was investigated by ab initio molecular dynamics simulations and in-situ synchrotron X-ray diffraction. It is predicted that deformed nanoscale ordering Al layers with a rhombohedral-centered hexagonal structure ($R\overline{3}m$ space group) instead of the intrinsic fcc structure ($Fm\overline{3}m$ space group) form on substrate at temperature above Al liquids. With Al atoms stacking away from the interface, the ordering structure reaches a critical thickness, which inhibits the consecutive stacking of Al atoms on substrates. The locally stacking reconstruction induced by Ti atom relieves the accumulated elastic strain energy in ordered Al layers, facilitating fully heterogeneous nucleation on substrate beyond the deformed ordering Al layer around the melting point. The roles of liquid/substrate interface with Ti solute in the physical behavior of heterogeneous nucleation on substrate were discussed.

Aluminum single crystal with 99.999% purity was deformed at room temperature by equal channel angular pressing (ECAP) up to 16 passes. Grain size and misorientation of processed samples were quantitatively characterized by TEM and EBSD. The results show that the refinement efficiency of high purity aluminum single crystal was poor in the initial stage. Extrusion by fewer ECAP passes (n ≤ 8) resulted in only elongated grains containing a large number of subgrains and small misorientations between grains. Stable microstructures of nearly equiaxed grains with high misorientations were obtained by 15 passages, indicating that the initial extremely coarse grains and highly uniform grain orientation are not conducive to the accumulation of strain energy. The initial state of high purity aluminum has a significant effect on the refining efficiency of the ECAP process.