The modification of the electronic structure of bilayer MoS2 by an external electric field can have potential applications in optoelectronics and valleytronics. Nevertheless, the underlying physical mechanism is not clearly understood, especially the effects of the van der Waals interaction. In this study, the spin orbit-coupled electronic structure of bilayer MoS2 has been investigated using the first-principle density functional theory. We find that the van der Waals interaction as well as the interlayer distance has significant effects on the band structure. When the interlayer distance of bilayer MoS2 increases from 0.614 nm to 0.71 nm, the indirect gap between the Γ and Λ points increases from 1.25 eV to 1.70 eV. Meanwhile, the energy gap of bilayer MoS2 transforms from an indirect one to a direct one. An external electric field can shift down (up) the energy bands of the bottom (top) MoS2 layer and also breaks the inversion symmetry of bilayer MoS2. As a result, the electric field can affect the band gaps, the spin-orbit interaction and splits the valance bands into two groups. The present study can help us understand more about the electronic structures of MoS2 materials for potential applications in electronics and optoelectronics.

We propose a method of generating spin currents in monolayer graphene through adiabatic quantum pumping by two oscillating potentials. Spin splitting is induced in the graphene layer by ferromagnetic proximity. The pumped charge and spin currents are sensitive functions of the Fermi energy, which can thus be used to control the degree of polarization. The predicted pumped currents are measurable using the current technology. The proposed method is useful in the development of graphene spintronics.

We propose a method of realizing an effective electron spin beam splitter in graphene through the Goos-Hänchen effect. The device consists of a layer of monolayer graphene on which two ferromagnetic stripes are deposited with parallel or antiparallel magnetization configuration. It is shown that the transmitted spin-up and spin-down electron beams are found at different longitudinal positions and their spatial separation can be enhanced by the number of transmission resonances formed between the two ferromagnetic stripes. The spatial separation between the spin-up and spin-down electron beams can reach values up to hundreds of wavelengths, which can be observed experimentally.

We study the spin and valley dependent transport in a silicene superlattice under the influence of a magnetic exchange field, a perpendicular electric field and a voltage potential. It is found that a gate-voltage-controllable fully spin and valley polarized current can be obtained in the proposed device, and the spin and valley polarizations are sensitive oscillatory functions of the voltage potential. In properly designed superlattice structure, the spin and valley polarizations can be reversed from −100% to 100% by a slight change in the external voltage potential. The energy dispersion relations of the superlattice structure are also investigated, which helps us to understand the effects of the superlattice structure. The switching of the spin direction and the valley of the tunneling electrons by a gate voltage enables new possibilities for spin or valley control in silicene-based spintronics and valleytronics.

We study a method to generate pure spin current in monolayer graphene over a wide range of Fermi energy by adiabatic quantum pumping. The device consists of three gate electrodes and two ferromagnetic strips, which induce a spin-splitting in the graphene through the proximity effect. A pure spin current is generated by applying two periodic oscillating gate voltages. We find that the pumped pure spin current is a sensitive oscillatory function of the Fermi energy. Large spin currents can be found at Fermi energies where there are Fabry-Perot resonances in the barriers. Furthermore, we analyze the effects of the parameters of the system on the pumped currents. Our predicted pumped spin current can be of the order of 100 nA which is measurable using the current technology. The proposed method is useful in the realization of graphene spintronic devices.

We study the spin-dependent transport properties of graphene nanoribbons with Rashba spin–orbit interaction (SOI). It is found that highly spin polarized electrical currents can be produced in asymmetrically-notched graphene nanoribbons, and the polarization components are found to be along the x, y and z directions. The spin polarization is largely enhanced by breaking the spatial symmetries of ideal graphene nanoribbons with Rashba SOI, and the spin polarized electrical currents with higher flexibility in the orientation of the polarization can be generated. This offers new possibilities for the generation of high spin polarization in graphene nanoribbons without external magnetic fields.