Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.

We demonstrate a wavelength sensor based on whispering gallery mode (WGM) resonators. For the first time, multiple polymethyl methacrylate (PMMA) microspheres were simultaneously attached to a tapered fiber. WGM resonances from these commercially available PMMA microspheres were observed with a NIR camera, monitoring the scattered light. Circulating light in the WGMs was scattered on the outer layer of the microspheres and appeared as bright spots due to scattering defects. For each laser wavelength fed into the tapered fiber, the light interfered differently for the various sizes of PMMA microspheres. We measured scattered light intensity for different wavelengths and created a barcode for each microsphere. Combining these barcodes into a mode map allowed for unknown wavelength detection. A tunable laser around 1550 nm was used for measurements. As a result, a laser wavelength sensor system with a detection limit of 5 pm was demonstrated. The principles of increasing selectivity, as well as creating a compact device, were discussed.

Kerr optical frequency combs (OFCs) based on silica microsphere whispering gallery mode resonator (WGMR) have various applications where they are used as a light source. For telecommunication purposes, WGMR-based Kerr-OFC comb generators can be physically realized using silica microsphere resonators and can be used to replace multiple laser arrays. In such a realization, these novel light sources have the potential to demonstrate an attractive solution for intra-datacenter interconnects (DCI). In this paper, we show an experimental demonstration of a silica microsphere WGMR-based Kerr OFC light source where newly generated 400 GHz spaced carriers together with powerful linear equalization techniques, such as a linear symbol-spaced adaptive decision-feedback equalizer (DFE) with feed-forward (FF) and feedback (FB) taps, provide an alternative to individual lasers ensuring low-cost and low-complexity IM/DD scheme for the transmission of NRZ-OOK modulated signals at data rates up to 50 Gbps/λ over 2 km SMF link. Finally, we demonstrate a record 50 Gbps per λ transmission of NRZ-OOK modulated signals with a novel silica microsphere WGMR-based Kerr-OFC as a light source operating in the optical C-band, surpassing the previously demonstrated data rate record by five times.