Olga Sánchez Garrido

Dr. Olga Sánchez Garrido

CSIC - Instituto de Ciencia de Materiales de Madrid (ICMM), Cantoblanco, Spain
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Research Focus & Metrics

Academic Career Length

41Years (1986-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 May 2006 in Surface and Coatings Technology
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Journal Article
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EFE. Forniés
E. Forniés
Ramon Escobar-GalindoRamon Escobar-Galindo
Ramon Escobar-Galindo
OGOlga Sánchez Garrido
Olga Sánchez Garrido
JAJ.M. Albella
J.M. Albella

22 September 2005 in Surface and Interface Analysis
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Journal Article
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JMJosé F. Marco
José F. Marco
JGJ. R. Gancedo
J. R. Gancedo
Maria A AugerMaria A Auger
Maria A Auger
OGOlga Sánchez Garrido
Olga Sánchez Garrido
JAJ. M. Albella
J. M. Albella

31 January 2006 in Physical Review B
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Journal Article
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Maria A AugerMaria A Auger
Maria A Auger
LVL. Vázquez
L. Vázquez
RCRodolfo Cuerno
Rodolfo Cuerno
MCM. Castro
M. Castro
MJMatej Jergel
Matej Jergel
OGOlga Sánchez Garrido
Olga Sánchez Garrido
We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values αloc=1.0 and βloc=0.39, and global exponent values α=1.7 and β=0.67, with a coarsening exponent of 1∕z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering.

20 December 2011 in Journal of Physics D: Applied Physics
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MYM Yuste
M Yuste
Ramon Escobar-GalindoRamon Escobar-Galindo
Ramon Escobar-Galindo
ICI Caretti
I Caretti
RTR Torres
R Torres
OGOlga Sánchez Garrido
Olga Sánchez Garrido
A systematic study for the optimization of the deposition process of ZnO thin films grown by dc magnetron sputtering at room temperature was carried out using different oxygen partial pressures and deposition times. We have established a correlation between the oxygen partial pressure, the chemical composition and the crystalline structure of the films. Stoichiometric and highly oriented ZnO thin films along the (0 0 2) crystal plane with very good optical performance were obtained for a relative oxygen gas flow of 20% in the gas mixture. Higher O2 concentrations resulted in non-stoichiometric ZnO with an excess of oxygen, which exhibited a lower degree of crystallinity and slightly higher band-gap energy. X-ray absorption near edge structure (XANES) analysis indicated that this excess of oxygen was incorporated in molecular form inducing a reduction in the crystallinity of the material. Post-deposition annealing treatments up to 500 °C significantly improved their crystallinity as confirmed by x-ray diffraction and XANES. Therefore, it has been found that it is possible to grow ZnO at room temperature with high crystal quality and good optical response by controlling the growth conditions.

15 September 1993 in Journal of Applied Physics
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CGC. Gomez-Aleixandre
C. Gomez-Aleixandre
OGOlga Sánchez Garrido
Olga Sánchez Garrido
ACA. Castro
A. Castro
JAJ. M. Albella
J. M. Albella
Methane and hydrogen discharges has been studied at different discharge frequencies (35 kHz, 13.56 MHz, and 2.45 GHz) and feeding gas ratios (up to 100% of methane) during diamond and diamond‐like deposition by plasma chemical vapor deposition techniques. Optical emission spectroscopy shows that the intensity of atomic hydrogen line (Hα) is the highest at the microwave frequency (2.45 GHz). In addition, at this frequency and low methane concentrations (<7.5%) the emission of CH+ species is also detected, which has been associated to the presence of the diamond phase in the films. On the contrary, at the lower frequencies (35 kHz and 13.56 MHz), the emission spectra are dominated by neutral CH species that are supposed to be the precursor species in the diamond‐like films deposited at these frequencies.

1 August 2007 in Vacuum
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Journal Article
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Maria A AugerMaria A Auger
Maria A Auger
JAJosé de Jesus Araiza
José de Jesus Araiza
CFCiro Falcony
Ciro Falcony
OGOlga Sánchez Garrido
Olga Sánchez Garrido
JAJ.M. Albella
J.M. Albella