The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices.

To protect natural resources and avoid environmental pollution, an effective method is proposed to recover tin (Sn) from waste printed circuit boards (WPCBs). In order to realize the efficient recovery of Sn, it is necessary to study the effects of experimental parameters on Sn leaching and understand the leaching kinetics of leaching processes. The statistical and mathematical technique (response surface methodology (RSM)) was used to study the effects of interactions of experimental parameters on the leaching rate and optimize experimental parameters. Moreover, a comprehensive understanding of the leaching kinetics of Sn in hydrochloric acid solution was obtained. The results show that the maximum Sn leaching rate was 97.6% which was obtained under the following optimal condition: 74.1 °C, 4.94 mol/L HCl, 495.5 rpm, and a solid–liquid ratio of 0.08 g/mL. The leaching mechanism of Sn was controlled by mixed control reaction with an activation energy of 20.3 kJ/mol. A macroscopic kinetic equation was also established, which summarizes the relationships between the experimental parameters and the leaching rates and can predict leaching results. The Sn in pregnant leach solution was recovered as stannic oxide (SnO₂) by precipitation-high temperature calcining technique. In this paper, a complete flowsheet for Sn recovery from WPCBs was developed.