Ki Kang Kim

Prof. Ki Kang Kim

Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea

Research Focus & Metrics

Academic Career Length

19Years (2008-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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28 October 2015 in Nature Communications
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Journal Article
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SKSoo Min Kim
Soo Min Kim
AHAllen Hsu
Allen Hsu
MPMin Ho Park
Min Ho Park
SCSang Hoon Chae
Sang Hoon Chae
SYSeok Joon Yun
Seok Joon Yun
JKJing Kong
Jing Kong
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

16 November 2018 in Science
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Journal Article
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JLJoo Song Lee
Joo Song Lee
SCSoo Ho Choi
Soo Ho Choi
SYSeok Joon Yun
Seok Joon Yun
YKYong In Kim
Yong In Kim
SBStephen Boandoh
Stephen Boandoh
SKSoo Min Kim
Soo Min Kim
Wafer-scale hBN crystalline films: Although wafer-scale polycrystalline films of insulating hexagonal boron nitride (hBN) can be grown, the grain boundaries can cause both scattering or pinning of charge carriers in adjacent conducting layers that impair device performance. Lee et al. grew wafer-scale single-crystal films of hBN by feeding the precursors into molten gold films on tungsten substrates. The low solubility of boron and nitrogen in gold caused micrometer-scale grains of hBN to form that coalesced into single crystals. These films in turn supported the growth of epitaxial wafer-scale films of graphene and tungsten disulfide. Science , this issue p. 817

18 March 2022 in Nature Communications
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Journal Article
Open access
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SCSoo Ho Choi
Soo Ho Choi
SYSeok Joon Yun
Seok Joon Yun
YWYo Seob Won
Yo Seob Won
COChang Seok Oh
Chang Seok Oh
SKSoo Min Kim
Soo Min Kim
YLYoung Hee Lee
Young Hee Lee
The effective application of graphene and other 2D materials is strongly dependent on the industrial-scale manufacturing of films and powders of appropriate morphology and quality. Here, we discuss three state-of-the-art mass production techniques, their limitations, and opportunities for future improvement. The industrial application of two-dimensional (2D) materials strongly depends on the large-scale manufacturing of high-quality 2D films and powders. Here, the authors analyze three state-of-the art mass production techniques, discussing the recent progress and remaining challenges for future improvements.

11 June 2015 in ACS Nano
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Journal Article
Closed access
JPJin Cheol Park
Jin Cheol Park
SYSeok Joon Yun
Seok Joon Yun
HKHyun Kim
Hyun Kim
JPJi-Hoon Park
Ji-Hoon Park
SCSang Hoon Chae
Sang Hoon Chae
YLYoung Hee Lee
Young Hee Lee

8 August 2014 in ACS Nano
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Journal Article
Closed access
JPJi-Hoon Park
Ji-Hoon Park
JPJin Cheol Park
Jin Cheol Park
SYSeok Joon Yun
Seok Joon Yun
HKHyun Kim
Hyun Kim
DLDinh Hoa Luong
Dinh Hoa Luong
YLYoung Hee Lee
Young Hee Lee

20 April 2015 in ACS Nano
Verified
Journal Article
Closed access
SYSeok Joon Yun
Seok Joon Yun
SCSang Hoon Chae
Sang Hoon Chae
HKHyun Kim
Hyun Kim
JPJin Cheol Park
Jin Cheol Park
JPJi-Hoon Park
Ji-Hoon Park
YLYoung Hee Lee
Young Hee Lee