Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.

Here, we report on the high-performance blue quantum dots (QDs) light-emitting diodes (QLEDs), in which the ZnO nanoparticles (NPs) are employed as the electron transport layer (ETL) and optimized with different alcohol solvents. The experimental results demonstrate that the properties of solvent used for ZnO NPs—such as polarity, viscosity and boiling point—play a crucial role in the quality of film where they modulate the electron injection across the QDs/ETL interface. The maximum current efficiency of 3.02 cd/A and external quantum efficiency (EQE) of 3.3% are achieved for blue QLEDs with ZnO NPs dispersed in butanol, exhibiting obvious enhancement compared with the other solvents. This work provides a new method to select proper solvent for ETL which can further improve the device performance.

Recent discoveries in the field of nanoscale vacuum channel (NVC) structures have led to potential on-chip electron sources. However, limited research has reported on the structure or material parameters, and the superiority of a nanoscale vacuum channel in an electron source has not been adequately demonstrated. In this paper, we perform the structural optimization design of an NVC-based electron source. First, the structure parameters of a vertical NVC-based electron source are investigated. Moreover, the symmetrical NVC structure is further demonstrated to improve the emission current and effective electron efficiency. Finally, a symmetrical nano-vacuum channel structure is successfully fabricated based on simulations. The results show that the anode current exceeds 15 nA and that the effective electron efficiency exceeds 20%. Further miniaturizing the NVC structures in high integration can be utilized as an on-chip electron source, thereby, illustrating the potential in applications of electron microscopes, miniature X-ray sources and on-chip traveling wave tubes.

As one of the most promising electronic devices in the post-Moore era, nanoscale vacuum field emission transistors (VFETs) have garnered significant attention due to their unique electron transport mechanism featuring ballistic transport within vacuum channels. Existing research on these nanoscale vacuum channel devices has primarily focused on structural design for logic circuits. Studies exploring their application potential in other vital fields, such as sensors based on VFET, are more limited. In this study, for the first time, the design of a vacuum field emission transistor (VFET) coupled with a piezoelectric microelectromechanical (MEMS) sensing unit is proposed as the artificial mechanoreceptor for sensing purposes. With a negative threshold voltage similar to an N-channel depletion-mode metal oxide silicon field effect transistor, the proposed VFET has its continuous current tuned by the piezoelectric potential generated by the sensing unit, amplifying the magnitude of signals resulting from electromechanical coupling. Simulations have been conducted to validate the feasibility of such a configuration. As indictable from the simulation results, the proposed piezoelectric VFET exhibits high sensitivity and an electrically adjustable measurement range. Compared to the traditional combination of piezoelectric MEMS sensors and solid-state field effect transistors (FETs), the piezoelectric VFET design has a significantly reduced power consumption thanks to its continuous current that is orders of magnitude smaller. These findings reveal the immense potential of piezoelectric VFET in sensing applications, building up the basis for using VFETs for simple, effective, and low-power pre-amplification of piezoelectric MEMS sensors and broadening the application scope of VFET in general.