Radiation detection, using materials to convert high-energy photons to low-energy photons (X-ray imaging) or electrical charges (X-ray detector), has become essential for a wide range of applications including medical diagnostic technologies, computed tomography, quality inspection and security, etc. Metal halide perovskite-based high-resolution scintillation-imaging screens or direct conversion detectors are promising candidates for such applications, because they have high absorption cross sections for X-rays due to their heavy atom (e.g., Pb²⁺, Bi³⁺, I^–) compositions; moreover, these materials are solution-processable at low temperature, possessing tunable bandgaps, near-unity photoluminescence quantum yields, low trap density, high charge carrier mobility, and fast photoresponse. In this review, we explore and decipher the working mechanism of scintillators and direct conversion detectors as well as the key advantages of halide perovskites for both detection approaches. We further discuss the recent advancements in this promising research area, pointing out the remaining challenges and our perspective for future research directions toward perovskite-based X-ray applications.

Doping of lead halide perovskites (LHPs) with the targeted impurities has emerged as an additional lever, a dimension beyond structural perfection and compositional distinction, for the alteration of many properties of halide perovskites. The past several years has seen an explosive increase in our knowledge of doped halide perovskites, which exhibit distinct optical and electronic properties with respect to undoped counterparts and improve performance of perovskite optoelectronic devices. However, there are still a series of fundamental scientific issues unresolved in the domain of doped perovskites. In this review, we present a critical overview of recent advances in the synthesis, property, and functional applications of metal-doped halide perovskites. We lay a particular focus on three-dimensional LHPs and discuss the influence of doped metal ions on the properties of these perovskites, including main group metal cations, transition metal cations, and rare earth (RE) metal cations. We thoroughly summarize the synthesis methods used, doping-induced variation in optoelectronic properties, and benefit of doping engineering for optimization of device performance. We highlight the milestone achievements in this field and emphasize new properties arising from dopants in halide perovskites. We also address controversies encountered during the development of doped perovskites and examine the remaining challenges in this exciting field of science. Finally, we present our perspectives for further investigation of this star material by doping engineering.