Recently, an unprecedented growth in the internet of things (IoT) is being observed, which is becoming the main driver for the entire semiconductor industry. Reliable maintenance and servicing of the IoT is becoming challenging, knowing that the IoT nodes outnumber the human population by a factor of seven. Energy harvesting (EH) can overcome those difficulties, delivering the energyautonomous IoT nodes to the market. EH converts natural or waste energies (vibrations, heat losses, air flows, light, etc.) into useful energy. This article explores the performance of ZnO nanowires under mechanical actuation to characterize their piezoelectric performance. ZnO nanowires were fabricated using ALD and a subsequent chemical bath growth. AISI 301 steel was used as a substrate of the EH device to better fit the mechanical requirements for the piezoelectric generator. We determined that a thin layer of another oxide below ZnO provides outstanding adhesion. The samples were submitted under repetitive mechanical stress in order to characterize the output piezovoltage for different conditions. They exhibited a piezoelectric signal which was stable after hundreds of actuations. This shows good promise for the use of our device based on ZnO, an Earth-abundant and non-toxic material, as an alternative to the conventional and popular but harmful and toxic PZT. The designed measurement setup demonstrated that a AISI 301 steel substrate coated with ZnO deposited by ALD and grown in a chemical bath has promising performance as a piezoelectric material. Characterized ZnO samples generate up to 80 nJ of energy during 55 s runs under matched load conditions, which is sufficient to supply a modern IoT node.

He present experiment concerns deposition of ZnO by ALD and subsequent growth of nanowires by chemical bath. We used a novel AISI 301 steel substrate with mechanical parameters that make it suitable to use as a piezoelectric component in an energy harvesting device. We found out that a thin layer of another oxide below ZnO provides outstanding adhesion. Without it, ZnO exhibits island growth and is mechanically unstable. Such prepared samples were placed under repeated mechanical stress. They showed a piezoelectric signal which is stable after hundreds of actuations. This shows good promise for use of our device based on ZnO, an earth-abundant and non-toxic material, as an alternative to widespread in piezo components but environmentally unfriendly PZT. The piezo layers generated enough power for operations performed by a IoT chip. The designed measurement setup allowed for the demonstration of an application of AISI 301 steel substrate coated with ZnO by atomic layer and chemical bath deposition techniques as a piezoelectric component capable of generating energies usable in Internet of Things applications.

In this paper, we present a CMOS NiSi totally silicided (TOSI)-gate on SiON module, based on a single step silicidation of the junctions and the total gate, and demonstrate its industrial feasibility on SRAM demonstrators. The single step silicidation is achieved by the use of an ultra-low initial Si gate electrode and selective S/D epitaxy, which allows us to avoid any additional CMP step. We show excellent transistor morphology, good device results and first functional NiSi TOSI-gate SRAMs in a state-of-the-art industrial cell size indicating the potential of our TOSI integration module for LP applications

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