X-ray response performances of a p-NiO/β-Ga₂O₃ hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced by the trap-assistant conductive process of the HJD under reverse bias, which exhibited an increasing net (response) current, nonlinearity, and a long response time. After irradiation, the Poole–Frenkel emission (PFE) dominated the leakage current of HJDs due to the higher electric field caused by the increased net carrier concentration of β-Ga₂O₃. This conductive process weakened the performance of the HJD X-ray detector in terms of sensitivity, output linearity, and response speed. This study provided valuable insights into the radiation damage and performance degradation mechanisms of Ga₂O₃-based radiation detectors and offered guidance on improving the reliability and stability of these radiation detectors.

In order to address the weaknesses of poor corrosion resistance of hydraulic cylinder piston rods, we have developed a surface protection strategy for titanium aluminum nitride coatings by filter cathode vacuum arc (FCVA) technology. The optimization and regulatory mechanism of N₂ flow rate on the microstructure, mechanical, and electrochemical oxidation behaviors have been emphasized. The results indicated that all coatings revealed a nanocrystalline amorphous composite structure dominated by an fcc TiAlN phase. However, the solid solution content, growth orientation, and grain size could be controlled by the nitrogen flow rate, thereby achieving optimized hardness, adhesion strength, corrosion, and oxidation resistance. Specifically, with the increase in the N₂ flow rate, the solid solution content continued to rise, while the crystal orientation transformed from the (111) to the (200) plane, and the grain size initially increased and then decreased. As a result, mechanical properties, including hardness, toughness, resistance to plastic deformation, and adhesion strength, displayed a trend of initially increasing and then decreasing. The corrosion failure of coatings was linked to surface defects controlled by the N₂ flow rate, rather than the composition and phase structure. The coating displayed superior corrosion resistance at low N₂ flow rates due to fewer macroscopic particles and pore defects. This study provides valuable insights into the corrosion behavior of an aluminum titanium nitrogen coating, providing crucial guidance for coating design in harsh environments.

AlCrTiZrMo high-entropy alloy (HEA) films with strong amorphization were obtained by co-filter cathode vacuum arc deposition, and the effect of thermal shock on the films was investigated in order to explore the protection mechanism of HEA films against mechanical components in extreme service environments. The results show that after annealing at 800 °C for 1 h, the formation of a dense ZrTiO₄ composite oxide layer on the surface actively prevents the oxidation from continuing, so that the AlCrTiZrMo HEA film exhibits excellent oxidation resistance at 800 °C in air. In the friction-corrosion coupling environment, the AlCrTiZrMo HEA film annealed at 800 °C for 1 h shows the best tribocorrosion resistance due to the stable dense microstructure and excellent mechanical properties, and its ΔOCP, COF and wear rate possess the smallest values of 0.055, 0.04 and 1.34 × 10⁻⁶ mm⁻³·N⁻¹·m⁻¹.

To investigate the in situ irradiation effects of gallium nitride at varying temperatures, we combined ion beam-induced luminescence spectroscopy with variable-temperature irradiation using a home-built IBIL system and a GIC4117 2 × 1.7 MV tandem accelerator. Unlike previous static studies—limited to post-irradiation or single-temperature luminescence—we in situ tracked dynamic luminescence changes throughout irradiation, directly capturing the real-time responses of luminescent centers to coupled temperature-dose variations—a rare capability in prior work. To clarify how irradiation and temperature affect the luminescent centers of GaN, we integrated density functional theory (DFT) calculations with literature analysis, then resolved the yellow luminescence band into three emission centers via Gaussian deconvolution: 1.78 eV associated with C/O impurities, 1.94 eV linked to VGa, and 2.2 eV corresponding to CN defects. Using a single-exponential decay model, we further quantified the temperature- and dose-dependent decay rates of these centers under dual-variable temperature and dose conditions. Experimental results show that low-temperature irradiation such as at 100 K suppresses the migration and recombination of V_Ga/C_N point defects, significantly enhancing the radiation tolerance of the 1.94 eV and 2.2 eV emission centers; meanwhile, it reduces non-radiative recombination center density, stabilizing free excitons and donor-bound excitons, thereby improving near-band-edge emission center resistance. Notably, the 1.94 eV emission center linked to gallium vacancies exhibits superior cryogenic radiation tolerance due to slower defect migration and more stable free exciton/donor-bound exciton states. Collectively, these findings reveal a synergistic regulation mechanism of temperature and radiation fluence on defect stability, addressing a key gap in static studies, providing a basis for understanding degradation mechanisms of gallium nitride-based devices under actual operating conditions (coexisting temperature fluctuations and continuous radiation), and offering theoretical/experimental support for optimizing radiation-hardened gallium nitride devices for extreme environments such as space or nuclear applications.