This article is devoted to the study of the effect of ion sputtering on the alloy surface, using the example of martensitic stainless steel AISI 420 with ultrahigh-dose, high-intensity nitrogen ion implantation on the efficiency of accumulation and transformation of the depth distribution of dopants. Some patterns of change in the depth of ion doping depending on the target temperature in the range from 400 to 650 °C, current density from 55 to 250 mA/cm², and ion fluence up to 4.5 × 10²¹ ion/cm² are studied. It has been experimentally established that a decrease in the ion sputtering coefficient of the surface due to a decrease in the energy of nitrogen ions from 1600 to 350 eV, while maintaining the ion current density, ion irradiation fluence and temperature mode of target irradiation increases the ion-doped layer depth by more than three times from 25 μm to 65 µm. The efficient diffusion coefficient at an ion doping depth of 65 μm is many times greater than the data obtained when stainless steel is nitrided with an ion flux with a current density of about 2 mA/cm².

The peculiarities and modes of material modification with high-intensity, high-power density ion beams on the irradiated surface are studied for the first time. Chromium ions are implanted into a zirconium alloy using a 25 kW/cm2, 450 μs beam at the pulse repetition rates within 8–35 pps. Every high-energy ion pulse impact is followed by ultrafast cooling of the surface due to heat removal into the target material. Three modes are studied at the temperatures of 580, 700, and 900 °C with an additional pulsed heating. An increase in the average target temperature from 580 to 700 °C within 1 h at the same pulse power density allows increasing the depth of chromium ion alloying from 1.5 to more than 7 μm. The use of ultrafast cooling of the Zr1%Nb alloy surface offers a grain size reduction from a few μm to approximately 50–250 nm, without any microstructural changes throughout the sample volume. An inhomogeneous chromium ion distribution over the target surface and depth is observed.

Methods of modifying surface and near-surface layers of materials and coatings by ion beams can be applied in many fields of science and technology. To practically implement the technologies for the targeted improvement of the performance properties of parts and products for various purposes, it is of great interest to develop the methods of deep ion doping of near-surface layers of semiconductor materials, as well as metals and alloys due to the enhancement of radiation-stimulated diffusion under conditions when the irradiated sample deep layers are not subject to a significant temperature impact. This study concerns features and regularities of implementing the synergy of high-intensity titanium ion implantation at current densities of several hundred mA/cm² with simultaneous energy impact of a submillisecond ion beam with a power density reaching several tens of kW/cm² on the surface. This work is the first to show that the synergy of high-intensity ion implantation and the energy impact of a high-power density ion beam, taking titanium implantation into silicon as an example, provides the possibility of increasing the ion doping depth from fractions of μm to 6 μm by increasing the irradiation time from 0.5 to 60 min.