This paper introduces a method for improving the sensitivity to NO₂ gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO₂ gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO₂ sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.

A strategy for improving the sensitivity of a sensor for detecting CO and NH₃ gases is presented herein. The gas sensor was fabricated from ZnO metal oxide semiconductor nanostructures grown via a vapor–liquid–solid process and decorated with α-Fe₂O₃ nanoparticles via a sol–gel process. The response was enhanced by the formation of an α-Fe₂O₃/ZnO n–n heterojunction and the growth of thinner wires. ZnO nanowires were grown on indium–tin–oxide glass electrodes using Sn as a catalyst for growth instead of Au. The structure and elemental composition were investigated using field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. The gas sensing results indicate that the response value to 100 ppm CO was 18.8 at the optimum operating temperature of 300 °C.

This paper introduces a strategy for improving the sensitivity of a gas sensor to NO₂ gas. The gas sensor was fabricated using urchin-like ZnO nanostructures grown on MgO particles via vapor-phase growth and decorated with MgZnO nanoparticles via a sol-gel process. The urchin-like ZnO gas sensor decorated with MgZnO showed higher sensitivity to NO₂ gas than a pristine urchin-like ZnO gas sensor. When ZnO and MgZnO form a heterojunction, a two-dimensional electron gas is generated. This improves the performance of the fabricated gas sensor. The growth morphology, atomic composition, and phase structure were confirmed through field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.

Several studies on amorphous oxide semiconductor thin-film transistors (TFTs) applicable to next-generation display devices have been conducted. To improve the poor switching characteristics and gate bias stability of co-sputtered aluminum–indium–zinc oxide (AIZO) TFTs, we fabricate Al₂O₃/indium–zinc oxide (IZO) dual-active-layer TFTs. By varying the Al₂O₃ target power and oxygen partial pressure in the chamber during Al₂O₃ back-channel deposition, we optimize the electrical characteristics and gate bias stability of the Al₂O₃/IZO TFTs. The Al₂O₃/IZO TFTs, which are fabricated under 50 W Al₂O₃ target power and 13% oxygen partial pressure conditions, exhibit a high electron mobility of 23.34 cm²/V·s, a low threshold voltage of 0.96 V, an improved on–off current ratio of 6.8 × 10⁷, and a subthreshold swing of 0.61 V/dec. Moreover, by increasing the oxygen partial pressure in the chamber, the positive and negative bias stress values improve to +0.32 V and −2.08 V, respectively. X-ray photoelectron spectroscopy is performed to reveal the cause of these improvements.

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μ_sat of 4.72 cm²/V∙s, V_th of −1.28 V, SS of 0.86 V/decade, and I_ON/_OFF of 1.70 × 10⁶ at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

Ultra-thin ZnO thin-film transistors with a channel thickness of <10 nm have disadvantages of a high threshold voltage and a low carrier mobility due to a low carrier concentration. Although these issues can be addressed by utilizing the strong reducing power of tri-methyl-aluminum, a method is required to control parameters such as the threshold voltage. Therefore, we fabricated a ZnO/Al₂O₃ thin-film transistor with a thickness of 6 nm and adjusted the threshold voltage and carrier mobility through the modulation of carrier generation by varying the growth temperature of Al₂O₃. As the growth temperature of Al₂O₃ increased, oxygen vacancies generated at the hetero–oxide interface increased, supplying a free carrier into the channel and causing the threshold voltage to shift in the negative direction. The optimized device, a ZnO/Al₂O₃ thin-film transistor with a growth temperature of 140 °C, exhibited a μ_sat of 12.26 cm²/V∙s, V_th of 8.16 V, SS of 0.65 V/decade, and I_ON/OFF of 3.98 × 10⁶. X-ray photoelectron spectroscopy was performed to analyze the properties of ZnO/Al₂O₃ thin films.