CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium-tellurium oxides to the substrate surface. In turn, the ZnO substrate was previously prepared by electrochemical etching to form a rough textured surface. In addition, an annealing mode was used in an oxygen stream to complete the oxidation process of the heterostructure surface. The resulting nanocomposite was investigated using RAMAN, XRD, SEM, and EDX methods. We assume that the oxides CdO and TeO₄ initially form on the surface and later evolve into TeO₂ and TeO₃ when saturated with oxygen. These oxides, in turn, are the components of the ternary oxides CdTeO₃ and CdTe₃O₈. It should be noted that this mechanism has not been fully studied and requires further research. However, the results presented in this article make it possible to systematize the data and experimental observations regarding the formation of cadmium-tellurium films.

This article considers the effect of MoO₃ and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO₃ and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO₃ and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO₂–WO₃–Bi₂O₃–MoO₃–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.

In this study, the structural, electronic, and elastic properties of cubic zirconium dioxide (c-ZrO₂) were investigated using the Density Functional Theory (DFT) approach. Lattice parameter optimization revealed that the lattice constant is 5.107 Å, the Zr–O bond length is 2.21 Å, and the unit cell density is 6.075 g/cm³ for the B3LYP functional. The bandgap width was determined to be 5.1722 eV. The investigation of the elastic properties of the cubic ZrO₂ crystal determined the Young’s modulus, bulk modulus, Poisson’s ratio, and hardness, which were found to be 315.91 GPa, 241 GPa, 0.282, and 13 (Hv), respectively, under zero external pressure. These results confirm the mechanical stability of ZrO₂.