Heat treatment in an oxygen-containing medium is a necessary procedure in the technology of forming photodetectors and emitters based on lead chalcogenides. Lead chalcogenide layers (PbS, PbSe) were prepared via a chemical bath deposition method. Surface oxidation of lead chalcogenide layers was analyzed using X-ray diffraction and Raman spectroscopy methods, and thermodynamic analysis of the oxidation of PbSe and PbS layers was also performed. The calculated phase diagrams from 20 °C to 500 °C showed good agreement with the experimental results. According to the thermodynamic analysis, the oxidation products depend on the initial composition of the layers and temperature of the annealing. In some cases, the formation of a separate metallic phase Pb is possible along with the formation of lead oxide PbO and other oxides. The performed thermodynamic analysis makes it possible to substantiate the two-stage annealing temperature regimes which ensure an increase in the speed of photodetectors.

The original idea is to deposit metal layers from concentrated solutions of colloidal inks of metal nanoparticles (silver) in a programmable pattern using methods of modified 3D extrusion with syringe dispenser, followed by thermal and electrodiffusion bonding of the nanostructured metal layer in the presence of a strong electric field. Porous semiconductor structures based on monocrystalline silicon of n- and p-type electrical conductivity with different resistivity were obtained by the method of electrochemical etching of the initial plate in electrolytes based on hydrofluoric acid. For the analysis of the hydrophobicity — hydrophilicity condition and, accordingly, the wettability of porous semiconductor structure, a specially developed apparatus was used, based on measuring the contact angle of wetting by the spreading drop method. To study the morphology of the surface of the obtained samples, the methods of scanning electron (Mira TESCAN II) and scanning-probe (Integra Terma) microscopy were used.

The use of liquid probes based on indium–gallium eutectic (EGaIn) with the possibility of positioning is an important problem for the study of thin films. This work is centered on the creation of a setup for measuring the current–voltage characteristics with the use of a liquid eutectic electrode. A technique for obtaining a cone-shaped liquid EGaIn electrode, a 3D assembly model and an algorithm for the operation of a probe setup for obtaining the current–voltage characteristics using liquid contacts are presented.

A technique for synthesizing gas-sensing copper-oxide layers by layer-by-layer deposition onto glass and plastic substrates is considered. Deposition is based on the oxidation of a copper–ammonia complex by hydrogen peroxide. Layers synthesized at various numbers of deposition cycles are studied by atomicforce microscopy and transmission spectroscopy methods (300–1000 nm). The spectral shape indicates the mixed nature of the oxide with predominant copper oxide (I) Cu₂O with a corresponding band gap of 2.1 eV. The layers have a continuous granular structure. The surface concentration of Brönsted acid adsorption sites with pK_a ≈ 2.5 (OH acid groups), determined by the indicator method, is 560 μmol/m² for the initial films, and threefold increases after heat treatment at 80°C for 30 min. The results obtained are interesting for the use of the described technology for fabricating copper-oxide active layers in gas-sensing sensors operating at room temperature.

NSG01 industrial atomic force microscope probes were functionalized by the electrically conductive polymer, polyaniline, during in situ oxidative polymerization of aniline at the probe point, which...

Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.