Impedimetric biosensors are used for detecting a wide range of analytes. The detection principle is a perspective for the development of new types of analytical devices for biomolecular diagnosis of diseases. Of particular interest are biosensors with very high sensitivities, capable of detecting trace amounts of biomarkers or drugs in biological fluids. Impedimetric biosensors possess a potential for increased sensitivity, since their electrodes can be modified with nanostructured materials, in particular zinc oxide. In this work, a miniature biosensor with an array of zinc oxide nanorods synthesized by the hydrothermal method has been created. Protein A was immobilized on the resulting structure, which was previously tested for binding to omalizumab by capillary electrophoresis. Using impedance spectroscopy, it was possible to detect the binding of omalizumab at concentrations down to 5 pg/mL. The resulting structures are suitable for creating reusable biosensor systems, since ZnO-coated electrodes are easily cleaned by photocatalytic decomposition of the bound molecules. The biosensor is promising for use in Point-of-Care systems designed for fast, multimodal detection of molecular markers of a wide range of diseases.

Heat treatment in an oxygen-containing medium is a necessary procedure in the technology of forming photodetectors and emitters based on lead chalcogenides. Lead chalcogenide layers (PbS, PbSe) were prepared via a chemical bath deposition method. Surface oxidation of lead chalcogenide layers was analyzed using X-ray diffraction and Raman spectroscopy methods, and thermodynamic analysis of the oxidation of PbSe and PbS layers was also performed. The calculated phase diagrams from 20 °C to 500 °C showed good agreement with the experimental results. According to the thermodynamic analysis, the oxidation products depend on the initial composition of the layers and temperature of the annealing. In some cases, the formation of a separate metallic phase Pb is possible along with the formation of lead oxide PbO and other oxides. The performed thermodynamic analysis makes it possible to substantiate the two-stage annealing temperature regimes which ensure an increase in the speed of photodetectors.

The current–voltage characteristics (IVCs) of anodic TiO₂ films in a thin-film structure (Carbon paste/TiO₂/Ti/Al) were investigated in the temperature range of T = 80–300 K with bias voltages from −0.5 V to +0.5 V. Anodic oxide film, with a thickness of 14 nm, was obtained by electrochemical oxidation of Ti at a voltage of 10 V. The obtained data for various temperatures showed that the IVCs in the forward (negative on the Ti electrode) and reverse (positive on the Ti electrode) bias of the thin film structure are not symmetrical. Based on the analysis, three temperature ranges (sections) were identified in which the IVCs differ in their behavior. Examination of the IVCs revealed that the conductivity mechanism in Section I (temperature range from 298 to 263 K) is determined by the Space Charge Limited Current (SCLC). Section II, in the temperature range from 243 to 203 K, is characterized by the onset of conductivity involving donor centers, in the case where the concentration of electrons on traps is significantly higher than the concentration of electrons in the conduction band. In Section III, within the temperature range from 183 to 90 K, the conduction mechanism is the Poole–Frenkel process involving donor centers. These donor centers are located below the level of traps in the forbidden band. The results obtained indicate that anodic TiO₂ is an n-type semiconductor, in the bandgap of which there are both electron traps and donor centers formed by anionic (oxygen) vacancies. The different behavior of the characteristic energy with different sample biasing in the case of the Poole–Frenkel mechanism indicates a two-layer structure of anodic TiO₂.

The conductivity of direct and alternating current for graphite-like amorphous carbon films after annealing in vacuum at a temperature of 700 °C was studied. The I–V characteristics of such films are symmetrical. The I–V curve in logarithmic coordinates demonstrated the presence of two linear sections. A study of the frequency dependences of structures with a thin graphite-like amorphous carbon film showed a sharp increase in capacitance at low frequencies and a decrease in the high-frequency region. The increase in capacitance in the low-frequency region is explained by the Maxwell–Wagner polarization, which is observed in inhomogeneous dielectrics with conducting inclusions. The results of temperature measurements of resistance showed that at room temperatures, there is a mechanism of conduction of electrons with a variable jump length along localized states lying in a narrow energy band near the Fermi level. At the same time, with an increase in the injection current, an additional mechanism of hopping electrical transport with a variable jump length along localized states in the tail of the valence band arises, which leads to an increase in the conductivity of the films.

The crystallization conditions from the solution play an important role in determining the morphology, phase composition, and photovoltaic properties of perovskite films. Post-processing of the obtained films can have a crucial role in increasing the grain size of perovskite and enhancing its crystallinity. It has been shown that the formation of crystal nuclei can be utilized to accelerate crystallization. In this case, crystallization occurs through the growth of seed crystals created in the solution, enabling the formation of relatively large crystals. For the deposition of CH₃NH₃PbI₃ hybrid halide perovskite films from a solution of the perovskite in dimethylformamide, the spin coating technique was employed. Pre-crystallization was achieved by annealing the films at a temperature of 100 or 110 °C. The dissolution process involved adding a drop of dimethylformamide onto the substrate surface and allowing it to partially dissolve the perovskite film. Subsequently, residual solvent was removed through spin coating. The morphological analysis of the perovskite film surface after recrystallization at temperatures ranging from 80 to 130 °C was performed. The infrared transmission spectra of the obtained perovskite films were investigated, and their light absorption characteristics were studied through transmission spectra. The perovskite structure in the obtained films was confirmed by the peaks observed in the X-ray diffraction patterns. It has been shown that the photocurrent values for solar cells with perovskite films obtained by recrystallization are 15–20% higher than those of perovskite films obtained by traditional crystallization methods.