The in-situ strain/stress detection of hot components in harsh environments remains a challenging task. In this study, ZrB₂/SiCN thin-film strain gauges were fabricated on alumina substrates by direct writing. The effects of ZrB₂ content on the electrical conductivity and strain sensitivity of ZrB₂/SiCN composites were investigated, and based on these, thin film strain gauges with high electrical conductivity (1.71 S/cm) and a gauge factor of 4.8 were prepared. ZrB₂/SiCN thin-film strain gauges exhibit excellent static, cyclic strain responses and resistance stability at room temperature. In order to verify the high temperature performance of the ZrB₂/SiCN thin-film strain gauges, the temperature-resistance characteristic curves test, high temperature resistance stability test and cyclic strain test were conducted from 25 °C to 600 °C. ZrB₂/SiCN thin-film strain gauges exhibit good resistance repeatability and stability, and highly sensitive strain response, from 25 °C to 600 °C. Therefore, ZrB₂/SiCN thin-film strain gauges provide an effective approach for the measurement of in-situ strain of hot components in harsh environments.

A reliable protective layer is one of the main challenges in preventing oxidation of thin film sensors to achieve accurate, effective, and stable readings at high temperatures. In this work, an Al₂O₃-modified polymer-derived ceramic SiCN composite coating fabricated by a direct-writing technique is utilized as a protective layer for thin film sensors. The microstructure evolution of the Al₂O₃/SiCN films is examined herein. The protective layer exhibits excellent oxidation resistance and thermal stability at high temperatures up to 1000 °C, which contributes to improving the stability and lifetime of thin film sensors in extreme environments. The TiB₂/SiCN thin film resistive grid with the Al₂O₃/SiCN composite film as a protective layer is fabricated and tested. The results indicate that the coating can protect the TiB₂/SiCN thin film resistive grid at high temperatures up to 1000 °C, which is about 200 °C higher than that of the TiB₂/SiCN thin film resistive grid without a protective layer. The resistance change rates of the TiB₂/SiCN thin film resistive grid with a protective layer are 0.5%/h at 900 °C and 10.7%/h at 1000 °C.

Carbon-rich SiCN ceramics were prepared by divinylbenzene (DVB)-modified polysilazane (PSN2), and a high-conductivity SiCN thin film sensor suitable for medium-low temperature sensing was fabricated. The modified liquid precursors were patterned by direct ink writing to produce SiCN resistive grids with line widths of several hundreds of micrometers and thicknesses of several micrometers. The introduction of DVB not only increases the critical thickness of SiCN ceramics several times, but also significantly improves the conductivity of SiCN, making it meet the conductivity requirements of sensing applications in the mid-low temperature range. The electrical conductivity and microstructure of DVB-modified SiCN ceramics were studied in detail. In the temperature range of 30~400 °C, the temperature resistance performance of DVB modified SiCN resistance grid was measured. The SiCN ceramics with low DVB content not only have excellent electrical conductivity, but also have good oxidation resistance.