The application of nano-Ag grains as antiviral and antibacterial materials is widely known since ancient times. The problem is the toxicity of the bulk or big-size grain materials. It is known that nano-sized silver grains affect human and animal cells in some medical treatments. The aim of this study is to investigate the influence of nano-Ag grains embedded in a carbonaceous matrix on cytotoxicity, genotoxicity in fibroblasts, and mutagenicity. The nanocomposite film is composed of silver nanograins embedded in a carbonaceous matrix and it was obtained via the PVD method by deposition from two separated sources of fullerenes and silver acetate powders. This method allows for the preparation of material in the form of a film or powder, in which Ag nanograins are stabilized by a carbon network. The structure and morphology of this material were studied using SEM/EDX, XRD, and Raman spectroscopy. The toxicology studies were performed for various types of the material differing in the size of Ag nanograins. Furthermore, it was found that these properties, such as cell viability, genotoxicity, and mutagenicity, depend on Ag grain size.

The objective of this paper is to evaluate the effect of a nanostructured C-Pd film deposited in the gate area of a field-effect transistor (FET) with a carbon–palladium composite gate (C-Pd/FET) on the hydrogen-sensing properties of the transistor. The method of preparing a field-effect transistor (FET) with a C-Pd film deposited as a gate and the properties of such a transistor and the film itself are presented. The C-Pd film deposited by PVD method on the gate area serves as an active layer. The PVD process was carried out in a dynamic vacuum of 10⁻⁵ mbar from two separated sources—one containing fullerenes (C₆₀) and the other containing palladium acetate. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS, EDX) and electrical property studies were used to the characterize C-Pd films and FET/C-Pd structures. SEM observations revealed the topography of C-Pd films and FET/C-Pd transistors. EDS/EDX microanalysis was applied to visualize the arrangement of elements on the studied surfaces. The changes in electrical properties (resistance and relative resistance) due to the presence of hydrogen were studied in a designed and computerized experimental set-up. The enhanced properties of the FET/C-Pd transistor are demonstrated in terms of hydrogen detection.