This paper presents an extensive literature review on Light-Emitting Diode (LED) fundamentals and discusses the historical development of LEDs, focusing on the material selection, design employed, and modifications used in increasing the light output. It traces the evolutionary trajectory of the efficiency enhancement of ultraviolet (UV), blue, green, and red LEDs. It rigorously examines the diverse applications of LEDs, spanning from solid-state lighting to cutting-edge display technology, and their emerging role in microbial deactivation. A detailed overview of current trends and prospects in lighting and display technology is presented. Using the literature, this review offers valuable insights into the application of UV LEDs for microbial and potential viral disinfection. It conducts an in-depth exploration of the various microorganism responses to UV radiation based on the existing literature. Furthermore, the review investigates UV LED-based systems for water purification and surface disinfection. A prospective design for a solar-powered UV LED disinfection system is also delineated. The primary objective of this review article is to organize and synthesize pivotal information from the literature, offering a concise and focused overview of LED applications. From our review, we can conclude that the efficiency of LEDs has continuously increased since its invention and researchers are searching for methods to increase efficiency further. The demand for LED lighting and display applications is continuously increasing. Our analysis reveals an exciting horizon in microbial disinfection, where the integration of UV LED systems with cutting-edge technologies such as sensors, solar power, Internet-of-Things (IoT) devices, and artificial intelligence algorithms promises high levels of precision and efficacy in disinfection practices. This contribution sets the stage for future research endeavors in the domain of viral disinfection using solar-powered UV LED modules for universal applications.

This paper investigates TeO ₂ , one of the front Ag paste additives, to understand its role in low contact and gridline resistances for screen-printed Si solar cell. It is concluded that TeO ₂ aids the reduction of molten glass frit viscosity during contact co-firing. This in turn, leads to uniform flow of molten glass frit, both in the gridline bulk and interface of gridline and SiN _x . Therefore, the uniform wetting and etching of SiN _x and consequently larger contact area of metal to Si compared to its counterpart without TeO ₂ . Hence, the current transport mechanism from Si to gridline can be said to be both direct and tunneling. The Raman spectra showed a blue shift in the phase of the TeO ₂ after contact co-firing in the gridline bulk confirming a crystalline γ-TeO ₂ .

This paper reports on the ohmic contact formed by the conductive glass layer found at the interface of Ag/Si contacts on lowly doped emitter silicon solar cells due to the presence of semimetal nanoparticles. The scanning electron microscopy and scanning transmission electron microscope analyses revealed an interface glass layer (IGL) thickness of greater than 380 nm, which was enriched with micro-sized alloys composed of semimetal nanoparticles. This IGL was conductive as confirmed by conductive atomic force microscopy (C-AFM). The presence of these semimetal nanoparticles, identified as Ag${}_2$ Te and PbTe, was both endowed with low bandgap energies as confirmed by Raman spectroscopy and energy dispersive x-ray spectroscopy. These semimetal nanoparticles were found only in the IGL and formed a “bridge” to connect the Ag gridline and Si emitter for carrier transport. Based on the modified Fowler–Nordheim tunneling process, the modeled C-AFM I–V characteristic curve showed a barrier height of 0.1 eV corresponding to an IGL thickness of only 18 nm. Thus, the carrier transport mechanism “through the conductive bridge” was formed by the semimetal nanoparticles embedded in the IGL. Therefore, the high conductivity of the interface glass led to the specific contact resistance to be independent of the emitter peak doping concentration.