A sample of the β-Ga₂O₃/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga₂O₃layer was formed epitaxially on GaN. The valence band offset of the β-Ga₂O₃/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga₂O₃/GaN structure is 1.40 ± 0.08 eV.

In this study, red, green, cyan, warm white and cool white (RGCWW) LEDs are individually controlled to simulate dynamic daylight. The spectral power distributions (SPDs) are measured for both the daylight and the mixed white light. The correlated color temperature (CCT), circadian action factor (CAF) curves in the daytime of the mixed white LED almost overlap to those of daylight with a small error of about 1%. The CIE chromaticity coordinates of the mixed white light are distributed along the Planckian locus with a little deviation below 0.003. Also, its color rendering index (CRI) is above 90. The RGCWW five-chip LEDs of high circadian and visual performances will benefit to synchronize circadian rhythm in closed environment during long time without daylight, combined with better mood and alertness. The simulation errors and development trend of the mixed lighting are discussed.

The structural, optical, and magnetic properties of Cu-implanted GaN films have been investigated. No secondary phase was found within the resolution limit of the instrument but the lattice defects such as vacancies were present in the film. Room temperature ferromagnetism was observed with saturation magnetization of 0.3μB/Cu atom. The field-cooled magnetization curves can be well fitted by a Curie-Weiss model and a standard three-dimensional spin-wave model in the low and high temperature ranges, respectively. Our findings indicate that the vacancylike defects should be considered in understanding the observed magnetic properties of the Cu-implanted GaN films.

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

Accurate forward electrical characteristics of multiquantum-well (MQW) lasers have been measured using ac admittance measurements together with dc I-V plot. The synchronous step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at the onset of lasing were observed for the first time. With this effect, the lasing threshold can be deduced immediately by the LCR Meter. It is also found that the junction voltage jumps abruptly to a saturated value at the onset of lasing, and the starting and end points of jumping exactly correspond to the maximum of the second derivative of lasing power with respect to current and the kink point of the first derivative, respectively. All of the phenomena may help to verify and improve existing semiconductor laser models. In addition, negative capacitance effect in LDs was observed