Shift workers are mostly suffered from the disruption of circadian rhythm and health problems. In this study, we designed proper light environment to maintain stable circadian rhythm, cognitive performance, and mood status of shift workers. We used five-channel light-emitting diodes to build up the dynamic daylight-like light environment. The illuminance, correlated color temperature, and circadian action factor of light were tunable in the ranges of 226 to 678 lx, 2680 to 7314 K, and 0.32 to 0.96 throughout the day (5:30 to 19:40). During the nighttime, these parameters maintained about 200 lx, 2700 K, and 0.32, respectively. In this light environment, three subjects had engaged in shift work for 38 consecutive days. We measured plasma melatonin, activity counts, continuous performance tests, and visual analogue scale on mood to assess the rhythm, cognitive performance, and mood of subjects. After 38-day shift work, the subjects’ peak melatonin concentration increased significantly. Their physiological and behavioral rhythms maintained stable. Their cognitive performance improved significantly after night work, compared with that before night work. Their mood status had no significant change during the 38-day shift work. These results indicated that the light environment was beneficial to maintain circadian rhythm, cognitive performance and mood status during long-term shift work in closed environment.
GaN growth on cone-shaped nanoscale patterned sapphire substrates (NPSS) in the initial stages was investigated via a series of growth interruptions. The thickness of the nucleation layer (NL) was optimized as 15 nm. A high-quality GaN film was achieved with an average surface roughness of 0.13 nm over 5 × 5 μm2, a threading dislocation density (TDD) of 1.80 × 108 cm−2 and a residual stress of 0.40 GPa. X-ray diffraction (XRD) ω/φ-scans, cathodoluminescence (CL) mapping and transmission electron microscopy (TEM) measurements were carried out to study the GaN coalescence process on NPSS. Nano-nucleating, lateral growth and the submerging of the large tilt grains were confirmed as the primary factors that reduced the TDD and residual stress. The mechanism for GaN nucleation on NPSS and its effect on the subsequent growth stages were elucidated.
In this study, red, green, cyan, warm white and cool white (RGCWW) LEDs are individually controlled to simulate dynamic daylight. The spectral power distributions (SPDs) are measured for both the daylight and the mixed white light. The correlated color temperature (CCT), circadian action factor (CAF) curves in the daytime of the mixed white LED almost overlap to those of daylight with a small error of about 1%. The CIE chromaticity coordinates of the mixed white light are distributed along the Planckian locus with a little deviation below 0.003. Also, its color rendering index (CRI) is above 90. The RGCWW five-chip LEDs of high circadian and visual performances will benefit to synchronize circadian rhythm in closed environment during long time without daylight, combined with better mood and alertness. The simulation errors and development trend of the mixed lighting are discussed.
InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.
GaN/InGaN multi-quantum-wells (MQWs) micron light emitting diodes (µLEDs) with the size ranging from 10 to 300 µm are fabricated. Effects of strain relaxation on the performance of µLEDs have been investigated both experimentally and numerically. Kelvin probe force microscopy (KPFM) and micro-photoluminescence (µPL) are used to characterize the strained area on micron pillars. Strain relaxation and reducing polarization field in MQWs almost affects the whole mesa for 10 µm LEDs and about 4% area around the lateral for 300 µm LEDs. It makes a great contribution to high performance for smaller size µLEDs. Moreover, an indirect nanoscale strain measurement for µLEDs are provided.