Displays based on inorganic light-emitting diodes (LED) are considered as the most promising one among the display technologies for the next-generation. The chip for LED display bears similar features to those currently in use for general lighting, but it size is shrunk to below 200 microns. Thus, the advantages of high efficiency and long life span of conventional LED chips are inherited by miniaturized ones. As the size gets smaller, the resolution enhances, but at the expense of elevating the complexity of fabrication. In this review, we introduce two sorts of inorganic LED displays, namely relatively large and small varieties. The mini-LEDs with chip sizes ranging from 100 to 200 μm have already been commercialized for backlight sources in consumer electronics applications. The realized local diming can greatly improve the contrast ratio at relatively low energy consumptions. The micro-LEDs with chip size less than 100 μm, still remain in the laboratory. The full-color solution, one of the key technologies along with its three main components, red, green, and blue chips, as well color conversion, and optical lens synthesis, are introduced in detail. Moreover, this review provides an account for contemporary technologies as well as a clear view of inorganic and miniaturized LED displays for the display community.

This study demonstrates a novel package design to store colloidal quantum dots in liquid format and integrate them with a standard LED. The high efficiency and high quality color performance at a neutral white correlated color temperature is demonstrated. The experimental results indicate that the liquid-type quantum dot white light-emitting diode (LQD WLED) is highly efficient and reliable. The luminous efficiency and color rendering index (CRI) of the LQD WLED can reach 271 lm W_op ⁻¹ and 95, respectively. Moreover, a glass box is employed to prevent humidity and oxygen erosion. With this encapsulation design, our quantum dot box can survive over 1000 hours of storage time.

In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CSP) and surface-mount device package (SMD). Comparing with these two mainstream types of package, the light extraction efficiency of CSP, SMD, and FDCSP are 88%, 60%, and 96%, respectively. In addition to ultra-high light extraction efficiency, because of the 160-degree bat-wing light field, FDCSP could provide a thinner and low power consumption mini-LED solution with a smaller number of LEDs than CSP and SMD light source array.

We demonstrate excellent color quality of liquid-type white light-emitting diodes (WLEDs) using a combination of green light-emitting CsPbBr₃ and red light-emitting CdSe/ZnS quantum dots (QDs). Previously, we reported red (CsPbBr_1.2I_1.8) and green (CsPbBr₃) perovskite QDs (PQDs)-based WLEDs with high color gamut, which manifested fast anion exchange and stability issues. Herein, the replacement of red PQDs with CdSe/ZnS QDs has resolved the aforementioned problems effectively and improved both stability and efficiency. Further, the proposed liquid-type device possesses outstanding color gamut performance (132% of National Television System Committee and 99% of Rec. 2020). It also shows a high efficiency of 66 lm/W and an excellent long-term operation stability for over 1000 h.

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J_th) from 12 to 8.5 kA/cm², and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × J_th) test for over 500 h.

High-brightness white-light-emitting diodes (w-LEDs) with excellent color quality is demonstrated by using nontoxic nanomaterials. Previously, we have reported the high color quality w-LEDs with heavy-metal phosphor and quantum dots (QDs), which may cause environmental hazards. In the present work, liquid-type white LEDs composed of nontoxic materials, named as graphene and porous silicon quantum dots are fabricated with a high color rendering index (CRI) value gain up to 95. The liquid-typed device structure possesses minimized surface temperature and 25% higher value of luminous efficiency as compare to dispensing-typed structure. Further, the as-prepared device is environment friendly and attributed to low toxicity. The low toxicity and high R9 (87) component values were conjectured to produce new or improve current methods toward bioimaging application.