High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS₂ has recently shown a special two-dimensional (2D) structure and superior photoelectric performance, and it has shown new potential for next-generation electronics. However, the natural atomic layer thickness and large specific surface area of MoS₂ make the contact interface and dielectric interface have a great influence on the performance of MoS₂ FET. Thus, we focus on its main performance improvement strategies, including optimizing the contact behavior, regulating the conductive channel, and rationalizing the dielectric layer. On this basis, we summarize the applications of 2D MoS₂ FETs in key and emerging fields, specifically involving logic, RF circuits, optoelectronic devices, biosensors, piezoelectric devices, and synaptic transistors. As a whole, we discuss the state-of-the-art, key merits, and limitations of each of these 2D MoS₂-based FET systems, and prospects in the future.

The tin dioxide (SnO₂) photocatalyst has a broad application prospect in the degradation of toxic organic pollutants. In this study, micron-sized spherical SnO₂ and flower indium oxide (In₂O₃) structures were prepared by a simple hydrothermal method, and the In₂O₃/SnO₂ composite samples were prepared by a “two-step method”. Using Rhodamine B (RhB) as a model organic pollutant, the photocatalytic performance of the In₂O₃/SnO₂ composites was studied. The photocurrent density of 1.0 wt.% In₂O₃/SnO₂ was twice that of pure SnO₂ or In₂O₃, and the degradation rate was as high as 97% after 240 min irradiation (87% after 120 min irradiation). The reaction rate was five times that of SnO₂ and nine times that of In₂O₃. Combined with the trapping experiment, the transient photocurrent response, and the corresponding characterization of active substances, the possible degradation mechanism was that the addition of In₂O₃ inhibited the efficiency of electron–hole pair recombination, accelerated the electron transfer and enhanced the photocatalytic activity.

This study designs a dual-mode tunable terahertz absorber leveraging vanadium dioxide (VO₂) phase transition properties. It dynamically switches between narrowband and broadband absorption modes through insulator-to-metal transformation.

The device achieves broadband absorption exceeding 90% within 3.55–9.95 THz, an absorption bandwidth of 6.4 THz and a fractional bandwidth reaching 94.81%.