A DMPU custom-tailored solvent system effectively improved the film quality of perovskites, achieving one of the highest V _OC of 1.256 V for 1.65 eV wide-bandgap PSCs.

High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS₂ has recently shown a special two-dimensional (2D) structure and superior photoelectric performance, and it has shown new potential for next-generation electronics. However, the natural atomic layer thickness and large specific surface area of MoS₂ make the contact interface and dielectric interface have a great influence on the performance of MoS₂ FET. Thus, we focus on its main performance improvement strategies, including optimizing the contact behavior, regulating the conductive channel, and rationalizing the dielectric layer. On this basis, we summarize the applications of 2D MoS₂ FETs in key and emerging fields, specifically involving logic, RF circuits, optoelectronic devices, biosensors, piezoelectric devices, and synaptic transistors. As a whole, we discuss the state-of-the-art, key merits, and limitations of each of these 2D MoS₂-based FET systems, and prospects in the future.

Atomically thin 2-D semiconductors are widely used to build various novel photodiodes due to their appropriate band structure and dangling-bond-free surface. These emerging 2-D photodiodes have shown excellent performance, especially in responsivity. Here, we report a Schottky metal–semiconductor photodiode with an ultrashort molybdenum disulfide (MoS2) channel constructed by a vertical structure. The device showed excellent rectification and optical response characteristics due to the large Schottky barrier height ( $\text{q}\varphi _{\text{SB}}$ ) through the physical transfer method to get rid of the Fermi-level pinning effect. In addition, the vertical structure dramatically reduces the channel length to the atomic scale and efficiently collects excited carriers with little recombination loss. Furthermore, the responsivity in those photodiodes is often associated with the light intensity and voltage bias. The thermionic emission theory was employed to explain the impacts of light intensity and voltage bias on the photodiode responsivity. This work can not only improve our fundamental understanding of the photovoltaic and photoconductive effects of 2-D semiconductors but also serve as an important reference for comparing and analyzing photodetectors based on 2-D semiconductors.

Sol–gel-based amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have gained widespread attention due to their simple process and low cost. Herein, a-IGZO thin films with In : Ga : Zn = 4 : 1 : 4 were fabricated at 400 °C using a sol–gel process, and high-performance a-IGZO TFTs were successfully demonstrated through contact engineering following the guidance of the Schottky–Mott rule, i.e., low work function metals In and Ga with low melting points were employed as contact electrodes. The Ga-contacted and In-contacted devices exhibit superior performance. Specifically, at V_ds = 1 V, the performance of Ga-contacted devices and In-contacted devices exhibited an increased from μ_FE = 5.67 cm² V⁻¹ s⁻¹, V_th = 2.19 V, SS = 0.91 V dec⁻¹, and I_ON/I_OFF = 7.9 × 10⁵ in Cr-contacted devices to μ_FE = 11.40 cm² V⁻¹ s⁻¹, V_th = 1.17 V, SS = 0.56 V dec⁻¹, and I_ON/I_OFF = 2.5 × 10⁶ as well as μ_FE = 12.67 cm² V⁻¹ s⁻¹, V_th = 0.17 V, SS = 0.47 V dec⁻¹, and I_ON/I_OFF = 5.4 × 10⁶. Meanwhile, the contact resistance of Ga-contacted a-IGZO TFTs (1088 kΩ μm) and In-contacted a-IGZO TFTs (403 kΩ μm) are much lower than that of Cr-contacted devices (1890 kΩ μm). The improvement of device performance can be attributed to lower metal work function and superior contact interface quality, which can inhibit the Fermi level pinning effect and maximize the performance of N-channel a-IGZO TFTs. Furthermore, both the positive and negative bias stability of the devices with the different contact were systematically studied. At 3600 s for NBS (V_gs = −20 V) and PBS (V_gs = +20 V), the Ga-contacted and In-contacted devices are shifted by −3.5 V and 11.5 V and −3.1 V and 9.1 V, respectively, which are better than the −10.6 V and 17 V of the Cr-contacted ones. These results further confirm that In and Ga can form high-quality interfaces with a-IGZO. Our results demonstrate a simple and effective strategy to fabricate high-performance sol–gel-based a-IGZO TFTs and provide a solid foundation for its practical application.