Organic–inorganic lead halide perovskites have recently emerged as highly competitive light absorbing materials for low cost solution-processable photovoltaic devices. With the high efficiency already achieved, removing the toxicity, i.e., lead-free and stability are the key obstacles for perovskite solar cells. Here, we report the synthesis of an antimony (Sb)-based hybrid material having the composition of A₃Sb₂I₉ [A = CH₃NH₃ (MA), Cs] and an investigation of its potential photovoltaic applications. Sb-based perovskite-like materials exhibited attractive absorbance properties, with the band gaps of MA₃Sb₂I₉ and Cs₃Sb₂I₉ measured to be 1.95 and 2.0 eV, respectively. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric perovskites from appropriate precursor molar ratios incorporated with hydroiodic acid (HI). Planar hybrid Sb-based solar cells exhibited negligible hysteresis and reproducible power output under working conditions. A power conversion efficiency of 2.04% was achieved by the MA₃Sb₂I₉ perovskite-based device—the highest reported to date for a Sb-based perovskite solar cell.

Technological implementation of organolead trihalide perovskite (OTP) photovoltaics requires suppression of the surface ionic defects and grain boundaries of OTP films. These surface ionic defects have a detrimental effect on the power conversion efficiency (PCE), are notorious for introducing hysteresis into the current density–voltage (J–V) characteristics, and decrease the stability of perovskite solar cells (PSCs). Here, we report the use of core/shell quantum dots (QDs) as passivation layers on the OTP surfaces to decrease the trap density and, simultaneously, stabilize the OTP chemical structure and extend the charge carrier lifetime. Density functional theory (DFT) calculations indicated that the OTP surface defects and grain boundaries were effectively suppressed by the presence of the CdSe/ZnS QDs. We attribute the lower trap density of the OTP to the Se²⁻ anions from the CdSe/ZnS passivation layer, inducing van der Waals interactions between the organic and inorganic components of the framework. For PSCs featuring CdSe/ZnS QD passivation, the PCE reached close to 20% with diminishing hysteresis of the J–V characteristics and fill factor (FF) of 81.44%. Moreover, the PSCs incorporating the CdSe/ZnS QD passivation layer exhibited long-term stability, retaining 75 and 80% of their initial performance after 2400 and 720 h, respectively. This facile interfacial strategy appears highly applicable for preparing high-performance durable OTP-based high optoelectronic devices.