A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.

Research on enhancement green light emitter is important to obtain a perfect red-green-blue (RGB) induced white light source. Unfortunately the present of mixed phase in deposition of InGaN/GaN limited the potential LED efficiency. Therefore, we introduce a new method called as Low Temperature Ammonia Treatment (LTAT) to eliminate the mixed phase and to enhance the structure properties of InGaN/GaN. Two samples have been prepared, with LTAT (LED A) and without LTAT (LED B). Both samples have been characterized using optical microscope (OM), Atomic Force Microscope (AFM), X-ray rocking curve (XRC) and Electroluminescence (EL). On the structural characterization, the OM results show the present 3D island on LED B sample while sample LED A only shows 2D surface. The RMS surface roughness from AFM are 10.3 ± 0.4 nm and 13.5 ± 10.7 nm for LED A and LED B respectively. XRC analysis proved the LED A with LTAT has a homogenous XRD curve while LED B without LTAT has a mixed phase. The BSFs streak length measured as 1.42 nm⁻¹ and 1.61 nm⁻¹ for LED A and LED B respectively shows low crystallographic defect in LED A compared to LED B. For the EL characteristic, LED A shows a single sharp peak near 538.2 nm wavelength, while LED B shows a broad multi-peak profile at 435.7 nm, 480.6 nm and 520.5 nm. The single sharp peak shows enhancement in green light emission when LTAT is applied during deposition. Successful enhancement is structural and electroluminescence properties shows the effectiveness of LTAT proposed in this work for perfect RGB.