A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi₂ as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (R_s) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi₂-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Detection of sub-ppm acetic acid (CH₃COOH) is in demand for environmental gas monitoring. In this article, we propose a CH₃COOH gas sensor based on Sn₃O₄ and reduced graphene oxide (RGO), where the assembly of Sn₃O₄-RGO nanocomposites is dependent on the synthesis method. Three nanocomposites prepared by three different synthesis methods are investigated. The optimum assembly is by hydrothermal reactions of Sn⁴⁺ salts and pre-reduced RGO (designated as RS nanocomposite). Raman spectra verified the fingerprint of RGO in the synthesized RS nanocomposite. The Sn₃O₄ planes of (111), (210), (130), ($\overline{13}2$) are observed from the X-ray diffractogram, and its average crystallite size is 3.94 nm. X-ray photoelectron spectroscopy on Sn3d and O1s spectra confirm the stoichiometry of Sn₃O₄ with Sn:O ratio = 0.76. Sn₃O₄-RGO-RS exhibits the highest response of 74% and 4% at 2 and 0.3 ppm, respectively. The sensitivity within sub-ppm CH₃COOH is 64%/ppm. Its superior sensing performance is owing to the embedded and uniformly wrapped Sn₃O₄ nanoparticles on RGO sheets. This allows a massive relative change in electron concentration at the Sn₃O₄-RGO heterojunction during the on/off exposure of CH₃COOH. Additionally, the operation is performed at room temperature, possesses good repeatability, and consumes only ~4 µW, and is a step closer to the development of a commercial CH₃COOH sensor.

We report the development of graphene derivative deposition on silicon wafers through ultrasonic atomization process. The study includes the ultrasonic atomizer system design, process development, characterization of the nanomaterial, and its heat transfer analysis. In this study, ultrasonic atomizer system was developed to deposit graphene oxides on 8”silicon wafer for seamless integration with semiconductor processes. The atomization process was performed in a chamber under control environment to ensure high quality of deposition process.