Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer, PH1000. Ultrathin Au was introduced to increase the conductivity of metal mesh, and the optimal hexagonal Ni (30 nm)/Au (10 nm) mesh (line width of 5 μm) shows a transmittance close to 80% in the visible light region and a sheet resistance lower than 16.9 Ω/sq. The conductive polymer PH1000 not only smooths the raised surface of the metal mesh but also enhances the charge collection ability of metal mesh. The fabricated PSCs have the typical planar structure (glass/Ni-Au mesh/PH1000/PEDOT:PSS/MA_yFA_1−yPbI_xCl_3−x/PCBM/BCP/Ag) and the champion PSC (0.09 cm²) obtains a power conversion efficiency (PCE) of 13.88%, negligible current hysteresis, steady current density and PCE outputs, and good process repeatability. Its photovoltaic performance and stability are comparable to the reference PSC based on the ITO electrodes (PCE = 15.70%), which demonstrates that the Ni/Au mesh transparent electrodes are a promising ITO alternative to fabricate efficient PSCs. The relatively lower performance of Ni/Au based PSC results from the relatively slower charge extraction and stronger charge recombination than the ITO based PSC. Further, we tried to fabricate the large area (1 cm²) device and achieve a PCE over 6% with negligible hysteresis and steady current density and PCE outputs. The improvements of perovskite film quality and interface modification should be an effective approach to further enhance the device performance of Ni/Au based PSCs, and the Ni/Au mesh electrode may find wider applications in PSCs and flexible devices.

Perovskite/silicon tandem solar cells have garnered considerable interest due to their potential to surpass the Shockley–Queisser limit of single-junction Si solar cells. The rapidly advanced efficiencies of perovskite/silicon tandem solar cells benefit from the significant improvements in perovskite technology. Beginning with the evolution of wide bandgap perovskite cells towards two-terminal (2T) perovskite/silicon tandem solar cells, this work concentrates on component engineering, additives, and interface modification of wide bandgap perovskite cells. Furthermore, the advancements in 2T perovskite/silicon tandem solar cells are presented, and the influence of the central interconnect layer and the Si cell on the progression of the tandem solar cells is emphasized. Finally, we discuss the challenges and obstacles associated with 2T perovskite/silicon tandem solar cells, conducting a thorough analysis and providing a prospect for their future.

Perovskite/silicon tandem solar cells are of great interest due to their potential for breaking the Shockley-Queisser limit of single-junction silicon solar cells. Perovskite solar cells are widely used as the top subcells in perovskite/silicon tandem solar cells due to their high efficiency and lower fabrication cost. Herein, we review the semi-transparent perovskite solar cell in terms of the mechanisms of their translucent structure, transparent electrodes, charge transport layer, and component modification. In addition, recent progress in the research and development of 4T perovskite/silicon tandem solar cells is summarized, with emphasis on the influence of perovskite structure and silicon cells on the progress of tandem solar cells. Finally, we discuss the challenges associated with 4T perovskite/silicon tandem solar cells and suggest directions for the development of perovskite/silicon commercialization.

Perovskite solar cell efficiency is not only related with material properties, but also affected by the interface engineering that used in perovskite solar cells. The perovskite film/electrode interface properties play important roles in charge carrier extraction, transport, and recombination. To achieve better interface contact for the device operation, proper interlayers or surface treatment should be applied. In this study, we applied a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer with a solvent/solution washing treatment as the hole transport layer. It showed that by the solvent/solution treatment, the PEDOT:PSS film conductivity was significantly enhanced, and hence, the charge carrier transfer efficiency was efficiently improved, and the device short-circuit current density was enlarged. Finally, the device efficiency significantly increased from 14.8% to 16.2%.