In this paper, germanium-based solar cells were designed based on germanium (Ge) materials, and the cross-cone (CC) nanostructures were used as the absorber layer of the solar cells. The optical path inside the absorber layer was increased by microstructure reflection, thereby increasing the absorption efficiency of the germanium-based solar cell. The reflectivity, transmittance, electric field and magnetic field of the corresponding position of the device were simulated and calculated by the finite difference time domain (FDTD) method. By simulating doping and simulating the external potential difference, the short-circuit current density (J_SC), open-circuit voltage (V_OC), output power and photoelectric conversion efficiency (η) of the device were calculated. The study found that for the entire study wavelength range (300–1600 nm), the transmittance of the device was close to none, and the average light absorption rate under air mass 1.5 global (AM1.5G) was 94.6%. In the light wavelength range from 310 nm to 1512 nm with a width of 1201 nm, the absorption rate was greater than 90%, which is in line with the high absorption of the broadband. Among them, the absorption rate at 886 nm reached 99.84%, the absorption rate at 1016 nm reached 99.89%, and the absorption rate at 1108 nm reached 99.997%, which is close to full absorption. By exploring the electrical performance of the device under different Ge nanostructure parameters, a germanium-based solar cell device under the nanocross-cone absorption structure array with both high-efficiency light absorption and excellent electrical performance was finally obtained. The study shows that the V_OC of its single-junction cell was 0.31 V, J_SC reached 45.5 mA/cm², and it had a fill factor (FF) of 72.7% and can achieve a photoelectric conversion efficiency of 10.3%, surpassing the performance of most Ge solar cells today.

Detecting subsurface defects in optical components has always been challenging. This study utilizes laser scattering and photothermal weak absorption techniques to detect surface and subsurface nano-damage precursors of single-crystal silicon components. Based on laser scattering and photothermal weak absorption techniques, we successfully establish the relationship between damage precursors and laser damage resistance. The photothermal absorption level is used as an important parameter to measure the damage resistance threshold of optical elements. Single-crystal silicon elements are processed and post-processed optimally. This research employs dry etching and wet etching techniques to effectively eliminate damage precursors from optical components. Additionally, detection techniques are utilized to comprehensively characterize these components, resulting in the successful identification of optimal damage precursor removal methods for various polishing types of single-crystal silicon components. Consequently, this method efficiently enhances the damage thresholds of optical components.

In this paper, the solar absorption level of PEDOT:PSS/Ge organic and inorganic hybrid solar cells (HSCs) with different parameters of cruciform microstructure (CM) is studied, using the finite-difference time domain (FDTD) method. The light absorption in HSCs with CM is above 90% in the range of 300 nm to 1300 nm. Under the AM1.5 solar spectrum, the average absorptivity of solar energy is also at a very high level. At the same time, we use DEVICE software to calculate the electrical properties, such as the open-circuit voltage (V_oc), short-circuit current density (J_sc), and maximum power density (P_max). The electrical simulation results show that the P_max of HSCs with CM improves to 72.16% from the planar HSCs. Besides, in order to study the mechanism of solar energy absorption in HSCs containing CM, the logarithmic plots of electric field intensity of HSCs with CM and planar HSCs, are analyzed at different wavelengths. The work shows that the CM shows an excellent light-trapping effect, which reduces the surface reflectivity of HSCs, and greatly improves the photoelectric conversion efficiency of Ge solar cells.