Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX₂ with X = S or Se. This study focuses on three single vacancies: (i) molybdenum “V_Mo”; (ii) chalcogenide “V_X”; and (iii) di-chalcogenide “V_X2”. Five different samples of sizes ranging from 4 × 4 to 8 × 8 primitive cells (PCs) were considered in order to assess the effect of vacancy–vacancy interaction. The results showed that all defected samples were paramagnetic semiconductors, except in the case of V_Mo in MoSe₂, which yielded a magnetic moment of 3.99 μ_B that was independent of the sample size. Moreover, the samples of MoSe₂ with V_Mo and sizes of 4 × 4 and 5 × 5 PCs exhibited half-metallicity, where the spin-up state becomes conductive and is predominantly composed of $d_{xy}$ and $d_{{\mathrm{z}}^2}$ orbital mixing attributed to Mo atoms located in the neighborhood of V_Mo. The requirement for the establishment of half-metallicity is confirmed to be the provision of ferromagnetic-coupling (FMC) interactions between localized magnetic moments (such as V_Mo). The critical distance for the existence of FMC is estimated to be $d_c\cong$ 16 Å, which allows small sample sizes in MoSe₂ to exhibit half-metallicity while the FMC represents the ground state. The adsorption of atmospheric gases (H₂O, O₂, O₃) can drastically change the electronic and magnetic properties, for instance, it can demolish the half-metallicity characteristics. Hence, the maintenance of half-metallicity requires keeping the samples isolated from the atmosphere. We benchmarked our theoretical results with the available data in the literature throughout our study. The conditions that govern the appearance/disappearance of half-metallicity are of great relevance for spintronic device applications.

In this study, we aimed to elucidate the effects of temperature on the photoluminescence from ZnO–SiO₂ nanocomposite and to describe the preparation of SiO₂-coated ZnO nanocrystals using a chemical precipitation method, as confirmed by Fourier transform infrared (FTIR) and powder X-ray diffraction analysis (XRD) techniques. Analyses using high-resolution transmission microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), dynamic light scattering (DLS), and electrophoretic light scattering (ELS) techniques showed that the new nanocomposite has an average size of 70 nm and 90% silica. Diffuse reflectance spectroscopy (DRS), photoluminescence (PL), and photoluminescence-excitation (PLE) measurements at different temperatures revealed two emission bands at 385 and 590 nm when the nanomaterials were excited at 325 nm. The UV and yellow emission bands were attributed to the radiative recombination and surface defects. The variable-temperature, time-resolved photoluminescence (VT-TRPL) measurements in the presence of SiO₂ revealed the increase in the exciton lifetime values and the interplay of the thermally induced nonradiative recombination transfer of the excited-state population of the yellow emission via deep centers (DC). The results pave the way for more applications in photocatalysis and biomedical technology.