Recently, thin-film lithium niobate electro-optical modulators have developed rapidly and have become the core solution for the next generation of electro-optical problems. Compared with bulk lithium niobate modulators, these modulators not only retain the advantages of lithium niobate materials, such as low loss, high extinction ratio, high linear response and high optical power handling capabilities, but can also effectively improve some performance parameters, such as the voltage bandwidth performance of the modulator. Unfortunately, the extremely small electrode gap of thin-film lithium niobate EO (electro-optic) modulators causes metal absorption, resulting in higher microwave losses. The electro-optical performance of the modulator, thus, deteriorates at high frequencies. We designed traveling-wave electrodes with microstructures to overcome this limitation and achieve a 3 dB electro-optical bandwidth of 51.2 GHz. At the same time, we maintain low on-chip losses of <2 dB and a high extinction ratio of 15 dB. It is important to note that the devices we manufactured were metal-encapsulated and passed a series of reliability tests. The success of this modulator module marks a key step in the commercialization and application of thin-film lithium niobate modulation devices.

We propose a compact, high extinction ratio, and low-loss polarization beam splitter (PBS) on a lithium-niobate-on-insulator (LNOI) platform, based on an asymmetrical directional coupler and using a silicon nitride nanowire assisted waveguide (WG) and a grooved WG. By properly designing ${\mathrm{Si}}_3{\mathrm{N}}_4$ nanowires and grooved LN WGs, TE polarization meets the phase matching condition, while significant mismatching exists for TM polarization. Numerical simulations show that the PBS has an ultra-high extinction ratio (ER) of ${\mathrm{TE}}_0$ and ${\mathrm{TM}}_0$ (larger than 40 dB and 50 dB, respectively). The device extinction ratios are larger than 10 dB over 100 nm wavelength ranges. Moreover, the device has an ultra-low insertion loss (IL less than 0.05 dB) at the wavelength of 1550 nm and maintains ILs less than 0.4 dB over 100 nm wavelength ranges.

A simple photonics-based dual-channel system is proposed to simultaneously measure the Doppler frequency shift (DFS) and angle of arrival (AOA) of microwave signals. The system applies two parallel push–pull Mach–Zehnder modulators (MZMs) for carrier suppression dual-sideband (CS-DSB) modulation. The introduction of the reference signal results in a DFS measurement without direction ambiguity. The DFS can be determined by measuring the frequency of the down-converted intermediate frequency (IF) signal, and the AOA can be calculated by comparing the phase shift of the two channels. A proof-of-concept experiment shows that the DFS measurement error is less than 0.4 Hz during ±100 kHz, and the AOA measurement error is within 1.5° in a range of 0–70°.