The Cu (3 to 15 at%) is incorporated into ZnO thin film by atomic beam co-sputtering has been investigated for enhancement in room temperature ferromagnetism and green photo-luminance. These Cu-ZnO thin films examined with Raman spectroscopy, X-Ray Diffraction (XRD), UV-Visible spectroscopy, Hall measurement, magnetic force microscopy (MFM) and magnetic hysteresis. Raman spectroscopy, XRD confirms wurtzite structure and improvement in the crystallinity of ZnO upto 7% Cu. Further increase in Cu concentration results in growth in Cu nanoparticles. On increasing Cu concentration, there is decrement in transparency and increase in band gap with increase in n-type carrier concentration as confirmed from UV-Visible and Hall measurement studies. Magnetic measurement exhibited unique feature of room temperature ferromagnetic ordering in undoped and doped sample upto 3% Cu. The enhancement in magnetic moment as well as green emission in photoluminescence response with increase in Cu doping indicates that generation of large defects in ZnO by Cu doping, which can be attributed to combined effect of the presence of oxygen vacancies and/or structural inhomogeneity as well as formation of bound magnetic polarons. Importantly, synthesised Cu doped ZnO thin films can be used as spin LEDs and switchable spin-laser diodes.

Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H₂ sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (∼21.6 s) and recovery times (∼27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H₂ sensor operates at low temperature (∼70 °C) unlike the existing high temperature (>150 °C) sensors.

Ti ₃ C ₂ T _x MXene was synthesized through LiF/HCl etching, and its structural and optical properties were examined. Additionally, ultrafast transient absorption spectroscopy was employed to investigate the excited state dynamics and electronic structure across the femtosecond to nanosecond timescales.

Yttria stabilized zirconia pellets with different crystallite sizes were irradiated with 80 MeV Ag⁶⁺ ions at room temperature and 1000 K to understand the effect of crystallite size/material microstructure and irradiation temperature on the radiation tolerance against high energy heavy ions [where electronic energy loss (S_e) dominates]. XRD and Raman spectroscopy measurements reveal that, irrespective of the irradiation temperature, the nano-crystalline samples suffered more damage when compared with the bulk-like sample. A reduction in the irradiation damage, i.e., improvement in the radiation tolerance, was observed for all the samples irradiated at 1000 K. The reduction in the damage, however, was remarkably higher for the nano-crystalline samples compared with the bulk-like sample, and hence the difference in the damage between the bulk-like and nano-crystalline samples was also significantly lower at 1000 K than that at room temperature. The irradiation damage, against S_e, was thus found to be critically dependent on the interplay between the irradiation temperature and the crystallite size. These results are explained on the basis of the “in-elastic thermal spike” model by taking into consideration the combined effects of crystallite size and environmental (irradiation) temperature on the electron-phonon coupling strength and the lattice thermal conductivity and hence on the resulting thermal spike. These results, besides being crucial from the fundamental prospect of comprehending the size and temperature dependent radiation damage against S_e, may also be important from the perspective of designing highly nano-crystalline materials for applications in various radiation environments.