Quantum key distribution (QKD), guaranteed by the principles of quantum mechanics, is one of the most promising solutions for the future of secure communication. Integrated quantum photonics provides a stable, compact, and robust platform for the implementation of complex photonic circuits amenable to mass manufacture, and also allows for the generation, detection, and processing of quantum states of light at a growing system’s scale, functionality, and complexity. Integrated quantum photonics provides a compelling technology for the integration of QKD systems. In this review, we summarize the advances in integrated QKD systems, including integrated photon sources, detectors, and encoding and decoding components for QKD implements. Complete demonstrations of various QKD schemes based on integrated photonic chips are also discussed.

Quantum key distribution (QKD) is theoretically secure using the principle of quantum mechanics; therefore, QKD is a promising solution for the future of secure communication. Although several experimental demonstrations of QKD have been reported, they have not considered the polarization-dependent loss in state preparation in the key-rate estimation. In this study, we experimentally characterized polarization-dependent loss in realistic state-preparation devices and verified that a considerable polarization-dependent loss exists in fiber- and silicon-based polarization modulators. Hence, the security of such QKD systems is compromised because of the secure key rate overestimation. Furthermore, we report a decoy-state BB84 QKD experiment considering polarization-dependent loss. Finally, we achieved rigorous finite-key security bound over up to 75 km fiber links by applying a recently proposed security proof. This study considers more realistic source flaws than most previous experiments; thus, it is crucial toward a secure QKD with imperfect practical devices.

Optical logic devices are essential functional devices for achieving optical signal processing. In this study, we design an ultra-compact (4.92 × 2.52 μm²) reconfigurable optical logic gate by using inverse design method with DBS algorithm based on Sb₂Se₃-SOI integrated platform. By selecting different amorphous/crystalline distributions of Sb₂Se₃ via programmable electrical triggers, the designed structure can switch between OR, XOR, NOT or AND logic gate. This structure works well for all four logic functions in the wavelength range of 1540–1560 nm. Especially at the wavelength of 1550 nm, the Contrast Ratios for XOR, NOT and AND logic gate are 13.77 dB, 11.69 dB and 3.01 dB, respectively, indicating good logical judgment ability of the device. Our design is robust to a certain range of fabrication imperfections. Even if performance weakens due to deviations, improvements can be obtained by rearranging the configurations of Sb₂Se₃ without reproducing the whole device.

In recent years, quantum network technology has been rapidly developing, with new theories, solutions, and protocols constantly emerging. The breakthrough experiments and achievements are impressive, such as the construction and operation of ultra-long-distance and multi-user quantum key distribution (QKD) networks, the proposal, verification, and experimental demonstration of new network nonlocality characteristics, etc. The results of recent research on QKD and network nonlocality are summarized and analyzed in this paper, including CV-MDI-QKD (continuous-variable measurement-device-independent QKD), TF-QKD (twin-field QKD), AMDI-QKD (asynchronous MDI-QKD), the generalization, sharing, and certification of network nonlocality, as well as the main achievements and related research tools of full network nonlocality and genuine network nonlocality, aiming to identify the current status and future development paths of the QKD and network nonlocality.

We report an investigation of waveguide inscription by femtosecond laser direct writing in two newly developed mid-infrared laser garnets. Usable guiding structures are obtained in one of these garnets but not in the other. This difference is mainly attributed to stimulated radiation, which is more intense in the latter garnet so that less absorbed energy of writing laser is involved in the process of waveguide creation. The mechanism for laser modification is ascribed to garnet intrinsic defects creation and crystalline lattices distortions. Their associated refractive index changes and stress field are essential conditions for waveguide formation.