Yttrium fluoride (YF₃) and yttrium oxide (Y₂O₃) protective coatings prepared using an atmospheric plasma spraying technique were used to investigate the relationship between surface erosion behaviors and their nanoparticle generation under high-density plasma (10¹²–10¹³ cm⁻³) etching. As examined by transmission electron microscopy, the Y₂O₃ and YF₃ coatings become oxyfluorinated after exposure to the plasma, wherein the yttrium oxyfluoride film formation was observed on the surface with a thickness of 5.2 and 6.8 nm, respectively. The difference in the oxyfluorination of Y₂O₃ and YF₃ coatings could be attributed to Y–F and Y–O bonding energies. X-ray photoelectron spectroscopy analyses revealed that a strongly fluorinated bonding (Y–F bond) was obtained on the etched surface of the YF₃ coating. Scanning electron microscopy and energy dispersive X-ray diffraction analysis revealed that the nanoparticles on the 12-inch wafer are composed of etchant gases and Y₂O₃. These results indicate that the YF₃ coating is a more erosion-resistant material, resulting in fewer contamination particles compared with the Y₂O₃ coating.

Zinc gallate (ZnGa₂O₄) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa₂O₄ was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa₂O₄ thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa₂O₄ during thermal annealing treatment resulted in the appearance of a Ga₂O₃ phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa₂O₄ (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa₂O₄ thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa₂O₄ thin film improved at higher annealing temperatures.

This study investigates the microstructure, mechanical and electrical properties of dense yttrium oxyfluoride (YOF) coatings fabricated by the atmospheric plasma spraying technique. Transmission electron microscopy and X-ray diffraction analysis revealed a well crystallized YOF coating with preferred orientations. The YOF coatings were more porous (approximate porosity 0.5%), with higher hardness (290 ± 30 HV), lower electrical resistivity (10¹⁶ Ω⋅cm), and breakdown voltage (5.57 kV), than conventional yttrium-fluoride plasma-protective coating. These results indicate the potential of the YOF coating as a novel antiplasma and corrosion-resistant ceramic.

Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y₂O₃) by high-density (sulfur fluoride) SF₆ plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF₆ plasma, the Y₂O₃ film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y₂O₃ sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y₂O₃ structure after fluorocarbon plasma exposure. These results indicate that the SF₆ plasma-treated Y₂O₃ film is more erosion resistant than the commercial Y₂O₃ coating, and thus accumulates fewer contamination particles.

In this paper, we report the growth and material characteristics of ZnGa₂O₄ thin films on c-plane sapphire and Si(100) substrates by a radio-frequency magnetron sputtering. When deposited on sapphire, the ZnGa₂O₄ film showed a polycrystalline nature and a less randomly oriented, primarily with the (111), (222) and (511) planes parallel to the substrate surface. On Si(100), the ZnGa₂O₄ thin film was randomly oriented with (311)- and (020)-plane polycrystalline properties. Transmission electron microscopy analysis revealed that an amorphous-layer interface was formed on the Si(100) substrate and the microstructure of ZnGa₂O₄ became disordered. The ZnGa₂O₄/sapphire emitted ultraviolet photoluminescence and green emissions. The dominant optical transitions depended on the deposition temperature, oxygen and Zn contents, and nature of the substrate. The structural and optical properties of sputter-deposited ZnGa₂O₄ thin film on sapphire indicated that sapphire substrate is suitable for the growth of crystalline, high-quality ZnGa₂O₄ thin film.

Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate’s surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 °C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga–Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.