Carbon nanotubes (CNTs) are proving to be versatile nanomaterials that exhibit superior and attractive electrical, optical, chemical, physical, and mechanical properties. Different kinds of CNTs exist, and their associated properties have been actively explored and widely exploited from fundamental studies to practical applications. Obtaining high‐quality CNTs in large volumes is desirable, especially for scalable electronic, photonic, chemical, and mechanical systems. At present, abundant but random CNTs are synthesized by various growth methods including arc discharge, chemical vapor deposition, and molecular beam epitaxy. An economical way to secure pristine CNTs is to disperse the raw soot of CNTs in solutions, from which purified CNTs are collected via sorting methods. Individual CNTs are generally hydrophobic, not readily soluble, requiring an agent, known as a surfactant to facilitate effective dispersions. Furthermore, the combination of surfactants, polymers, DNA, and other additives can enhance the purity of specific types of CNTs in confidence dispersions. With highly‐pure CNTs, designated functional devices are built to demonstrate improved performance. This review surveys and highlights the essential roles and significant impacts of surfactants in dispersing and sorting CNTs.

We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (< 100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.