Zinc oxide in the form of nanoscale materials can be regarded as one of the most important semiconductor oxides at present. However, the question of how chemical defects influence the properties of nanoscale zinc oxide materials has seldom been addressed. In this paper, we report on the introduction of defects into nanoscale ZnO, their comprehensive analysis using a combination of techniques (powder X‐ray diffraction (PXRD), X‐ray absorption spectroscopy/extended X‐ray absorption fine structure (XAS/EXAFS), electron paramagnetic resonance (EPR), magic‐angle spinning nuclear magnetic resonance (MAS‐NMR), Fourier‐transform infrared (FTIR), UV‐vis, and photoluminescence (PL) spectroscopies coupled with ab‐initio calculations), and the investigation of correlations between the different types of defects. It is seen that defect‐rich zinc oxide can be obtained under kinetically controlled conditions of ZnO formation. This is realized by the thermolysis of molecular, organometallic precursors in which ZnO is pre‐organized on a molecular scale. It is seen that these precursors form ZnO at low temperatures far from thermodynamic equilibrium. The resulting nanocrystalline ZnO is rich in defects. Depending on conditions, ZnO of high microstructural strain, high content of oxygen vacancies, and particular content of heteroatom impurities can be obtained. It is shown how the mentioned defects influence the electronic properties of the semiconductor nanoparticles.

We report on theoretical and experimental work involving a particular molecular switch, an [FeII(L)2]2+ complex, that utilizes a spin transition (``crossover''). The hallmark of this transition is a change of the spin of the metal ion, SFe=0 to SFe=2, at fixed oxidation state of the Fe ion. Combining density functional theory and first principles calculations, we demonstrate that within a single molecule this transition can be triggered by charging the ligands. In this process the total spin of the molecule, combining metal ion and ligands, crosses over from S=0 to S=1. Three-terminal transport through a single molecule shows indications of this transition induced by electric gating. Such an electric field control of the spin transition allows for a local, fast, and direct manipulation of molecular spins, an important prerequisite for molecular spintronics.

The determination of the structure of inhomogeneous metal-oxide surfaces represents a formidable task. With the present study, we demonstrate that using the binding energy of a probe molecule, CO, is a reliable tool to validate structural models for such complex surfaces. Combining several types of first-principles calculations with advanced molecular beam methods, we are able to provide conclusive evidence that the polar O-terminated surface of ZnO is either reconstructed or hydrogen covered. This finding has important consequences for the ongoing discussion regarding the stabilization mechanism of the electrostatically unstable (“Tasker type 3”) polar ZnO surfaces.

Diamagnetic oxides can, under certain conditions, become ferromagnetic at room temperature and therefore are promising candidates for future material in spintronic devices. Contrary to early predictions, doping ZnO with uniformly distributed magnetic ions is not essential to obtain ferromagnetic samples. Instead, the nanostructure seems to play the key role, as room temperature ferromagnetism was also found in nanograined, undoped ZnO. However, the origin of room temperature ferromagnetism in primarily non–magnetic oxides like ZnO is still unexplained and a controversial subject within the scientific community. Using low energy muon spin relaxation in combination with SQUID and TEM techniques, we demonstrate that the magnetic volume fraction is strongly related to the sample volume fraction occupied by grain boundaries. With molecular dynamics and density functional theory we find ferromagnetic coupled electron states in ZnO grain boundaries. Our results provide evidence and a microscopic model for room temperature ferromagnetism in oxides.