Herre S.J. van der Zant

Herre S.J. van der Zant


Research Focus & Metrics

Academic Career Length

36Years (1991-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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28 May 2019 in Nature Reviews Physics
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PGPascal Gehring
Pascal Gehring
JTJos M. Thijssen
Jos M. Thijssen
HZHerre S.J. van der Zant
Herre S.J. van der Zant

15 February 2011 in Advanced Materials
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FPFerry Prins
Ferry Prins
MMMaría Monrabal‐Capilla
María Monrabal‐Capilla
EOEdgar A. Osorio
Edgar A. Osorio
EMEugenio Coronado Miralles
Eugenio Coronado Miralles
HZHerre S.J. van der Zant
Herre S.J. van der Zant

13 October 2014 in Chemical Society Reviews
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MPMickael L. Perrin
Mickael L. Perrin
EBEnrique Burzuri
Enrique Burzuri
HZHerre S.J. van der Zant
Herre S.J. van der Zant
Artist impression of a single-molecule transistor, where a molecule is connected to the source and the drain electrodes. The red lines illustrated the electric field caused by the gate electrode, located below.

23 April 2018 in Chemical Society Reviews
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Riccardo FrisendaRiccardo Frisenda
Riccardo Frisenda
AMAday J. Molina-Mendoza
Aday J. Molina-Mendoza
TMThomas Mueller
Thomas Mueller
Andres Castellanos-GomezAndres Castellanos-Gomez
Andres Castellanos-Gomez
HZHerre S.J. van der Zant
Herre S.J. van der Zant
The use of two-dimensional materials as building blocks in the production of p–n junctions has opened the door to novel device architectures with exceptional optoelectronics properties.

5 February 2013 in Angewandte Chemie International Edition
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CACarlos R. Arroyo
Carlos R. Arroyo
STSimge Tarkuc
Simge Tarkuc
Riccardo FrisendaRiccardo Frisenda
Riccardo Frisenda
JSJohannes S. Seldenthuis
Johannes S. Seldenthuis
CWCharlotte H. M. Woerde
Charlotte H. M. Woerde
HZHerre S.J. van der Zant
Herre S.J. van der Zant

31 August 2008 in Nature Physics
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SES. Etaki
S. Etaki
MPMenno Poot
Menno Poot
IMI. Mahboob
I. Mahboob
KOK. Onomitsu
K. Onomitsu
HYH. Yamaguchi
H. Yamaguchi
HZHerre S.J. van der Zant
Herre S.J. van der Zant
Superconducting quantum interference devices, or SQUIDs as they are better known, are capable of detecting minute variations in magnetic field. Embedding a suspended beam into the structure of d.c. SQUID enables this sensitivity to be exploited for measuring displacements. Superconducting quantum interference devices (SQUIDs) are the most sensitive detectors of magnetic flux1 and are also used as quantum two-level systems (qubits)2. Recent proposals have explored a novel class of devices that incorporate micromechanical resonators into SQUIDs to achieve controlled entanglement of the resonator ground state and a qubit3 as well as permitting cooling and squeezing of the resonator modes and enabling quantum-limited position detection4,5,6,7,8,9,10. In spite of these intriguing possibilities, no experimental realization of an on-chip, coupled mechanical-resonator–SQUID system has yet been achieved. Here, we demonstrate sensitive detection of the position of a 2 MHz flexural resonator that is embedded into the loop of a d.c. SQUID. We measure the resonator’s thermal motion at millikelvin temperatures, achieving an amplifier-limited displacement sensitivity of 10 fm Hz−1/2 and a position resolution that is 36 times the quantum limit.