Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W⁻¹, detectivity of 2.4 × 10¹² Jones and external quantum efficiency of 3.6 × 10⁴% with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

Multi-metallic alloy nanoparticles (NPs) can enable the advanced applications in the energy, biology, electronics, optics and catalysis due to their multi-functionality, wide tunable range and electronic heterogeneity. In this work, various mono-, bi- and tri-metallic nanostructures composed of Ag, Au and Pt are demonstrated on transparent c-plane sapphire (0001) substrates and the corresponding morphological and optical characteristics are thoroughly investigated. The resulting Pt and AuPt NPs in this study demonstrate much enhanced LSPR responses as compared to the pure Pt NPs from the previous studies, which was contributed by the synergistic effect of Au and Pt and improved surface morphology. These results are sharply distinct in terms of surface morphology and elemental variability from those obtained by the dewetting of monometallic Ag, Au and Pt films under the similar growth conditions, which is due to the distinct dewetting kinetics of the bi-layer and tri-layer films. These NPs exhibit strongly enhanced localized surface plasmon resonance (LSPR) bands in the UV-VIS wavelengths such as dipolar, quadrupolar, multipolar and higher order resonance modes depending upon the size and elemental composition of NPs. The LSPR bands are much stronger with the high Ag content and gradually attenuated with the Ag sublimation. Furthermore, the VIS region LSPR bands are readily blue shifted along with the reduction of NP size. The Ag/Pt bi-layers and Ag/Au/Pt tri-layers are systematically dewetted and transformed into various AgPt and AgAuPt nanostructures such as networked, elongated and semispherical configurations by means of enhanced surface diffusion, intermixing and energy minimization along with the temperature control. The sublimation of Ag atoms plays a significant role in the structural and elemental composition of NPs such that more isolated and semispherical Pt and AuPt NPs are evolved from the AgPt and AgAuPt NPs respectively.

Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

A growth technique combining droplet epitaxy and molecular beam epitaxy (MBE) is developed to obtain a low density of InAs quantum dots (QDs) on GaAs nanoholes. This growth technique is simple, flexible, and does not require additional substrate processing. It makes possible separate control of the QD density via droplet epitaxy and the QD quality via MBE growth. In this letter the authors report the use of this technique to produce InAs QDs with a low density of $2.7\times {10}^8{\mathrm{cm}}^{-2}$ as well as good photoluminescence properties. The resulting samples are suitable for single QD device fabrication and applications.

Section Highlights High performance Al nanostructures/ZnO quantum dots heterostructure photodetectors with a controllable geometry of the Al nanostructures are demonstrated. Light utilization of the photoactive layers is significantly boosted with the Al nanostructures. The light confinement effect is inherently determined by the geometries of the Al nanostructures. AbstractSection Abstract Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures (NSs), offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers. Here, we demonstrate high-performance Al NS/ZnO quantum dots (Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs. The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures, and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures. The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation. Consequently, the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~ 1.065 mA compared to that of the pristine ZnO device, and an outstanding photoresponsivity of 11.98 A W⁻¹ is correspondingly achieved under 6.9 mW cm⁻² UV light illumination at 10 V bias. In addition, a relatively fast response is similarly witnessed with the Al/ZnO devices, paving a path to fabricate the high-performance UV photodetectors for applications.