Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W⁻¹, detectivity of 2.4 × 10¹² Jones and external quantum efficiency of 3.6 × 10⁴% with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

Multi-metallic alloy nanoparticles (NPs) can enable the advanced applications in the energy, biology, electronics, optics and catalysis due to their multi-functionality, wide tunable range and electronic heterogeneity. In this work, various mono-, bi- and tri-metallic nanostructures composed of Ag, Au and Pt are demonstrated on transparent c-plane sapphire (0001) substrates and the corresponding morphological and optical characteristics are thoroughly investigated. The resulting Pt and AuPt NPs in this study demonstrate much enhanced LSPR responses as compared to the pure Pt NPs from the previous studies, which was contributed by the synergistic effect of Au and Pt and improved surface morphology. These results are sharply distinct in terms of surface morphology and elemental variability from those obtained by the dewetting of monometallic Ag, Au and Pt films under the similar growth conditions, which is due to the distinct dewetting kinetics of the bi-layer and tri-layer films. These NPs exhibit strongly enhanced localized surface plasmon resonance (LSPR) bands in the UV-VIS wavelengths such as dipolar, quadrupolar, multipolar and higher order resonance modes depending upon the size and elemental composition of NPs. The LSPR bands are much stronger with the high Ag content and gradually attenuated with the Ag sublimation. Furthermore, the VIS region LSPR bands are readily blue shifted along with the reduction of NP size. The Ag/Pt bi-layers and Ag/Au/Pt tri-layers are systematically dewetted and transformed into various AgPt and AgAuPt nanostructures such as networked, elongated and semispherical configurations by means of enhanced surface diffusion, intermixing and energy minimization along with the temperature control. The sublimation of Ag atoms plays a significant role in the structural and elemental composition of NPs such that more isolated and semispherical Pt and AuPt NPs are evolved from the AgPt and AgAuPt NPs respectively.

Section Highlights High performance Al nanostructures/ZnO quantum dots heterostructure photodetectors with a controllable geometry of the Al nanostructures are demonstrated. Light utilization of the photoactive layers is significantly boosted with the Al nanostructures. The light confinement effect is inherently determined by the geometries of the Al nanostructures. AbstractSection Abstract Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures (NSs), offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers. Here, we demonstrate high-performance Al NS/ZnO quantum dots (Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs. The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures, and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures. The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation. Consequently, the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~ 1.065 mA compared to that of the pristine ZnO device, and an outstanding photoresponsivity of 11.98 A W⁻¹ is correspondingly achieved under 6.9 mW cm⁻² UV light illumination at 10 V bias. In addition, a relatively fast response is similarly witnessed with the Al/ZnO devices, paving a path to fabricate the high-performance UV photodetectors for applications.

Interface‐type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament‐type (FT) devices for neuromorphic computing because of their uniform, filament‐free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface‐dominated memristive device is demonstrated using a simple Au/Nb‐doped SrTiO₃ (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface‐controlled RS, the proposed device shows low device‐to‐device, cell‐to‐cell, and cycle‐to‐cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next‐generation neuromorphic computing.

Silver (Ag) nanostructures demonstrate outstanding optical, electrical, magnetic, and catalytic properties and are utilized in photonic, energy, sensors, and biomedical devices. The target application and the performance can be inherently tuned by control of configuration, shape, and size of Ag nanostructures. In this work, we demonstrate the systematical fabrication of various configurations of Ag nanostructures on sapphire (0001) by controlling the Ag deposition thickness at different annealing environments in a plasma ion coater. In particular, the evolution of Ag particles (between 2 and 20 nm), irregular nanoclusters (between 30 and 60 nm), and nanocluster networks (between 80 and 200 nm) are found be depended on the thickness of Ag thin film. The results were systematically analyzed and explained based on the solid-state dewetting, surface diffusion, Volmer–Weber growth model, coalescence, and surface energy minimization mechanism. The growth behavior of Ag nanostructures is remarkably differentiated at higher annealing temperature (750 °C) due to the sublimation and temperature-dependent characteristic of dewetting process. In addition, Raman and reflectance spectra analyses reveal that optical properties of Ag nanostructures depend on their morphology.