A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO₃ aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO₃ electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.

Porous templates are widely used for the preparation of various metallic nanostructures. Semiconductor templates have the advantage of controlled electrical conductivity. Site-selective deposition of noble metal formations, such as Pt and Au nanodots and nanotubes, was demonstrated in this paper for porous InP templates prepared by the anodization of InP wafers. Metal deposition was performed by pulsed electroplating. The produced hybrid nanomaterials were characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It was shown that uniform deposition of the metal along the pore length could be obtained with optimized pulse parameters. The obtained results are discussed in terms of the optimum conditions for effective electrolyte refreshing and avoiding its depletion in pores during the electroplating process. It was demonstrated that the proposed technology could also be applied for the preparation of metal nanostructures on porous oxide templates, when it is combined with thermal treatment for the oxidation of the porous semiconductor skeleton.

A room-temperature two-step cost-effective electrochemical technology is proposed for the preparation of free-standing Au nanomembranes. A thin Au film with the thickness less than 100 nm was deposited by pulsed electroplating on a GaAs substrate in the first step, while electrochemical etching was applied in the second technological step to introduce porosity into the GaAs substrate underneath the Au film. It has been shown that detachment of the film from the substrate occurs at optimized parameters of anodic etching. Scanning electron microscopy imaging of the deposited Au film revealed its nanoparticulate structure generated via the mechanism of hopping electrodeposition, i.e. the film proved to consist of a monolayer of Au nanoparticles with the mean diameter around 20–30 nm. It was found that nanoholes with the diameter controlled by the duration of negative voltage pulses can be introduced into the Au film during electroplating. The purity of the detached Au nanomembranes was demonstrated by the energy dispersive X-ray analysis. The flexibility, nanoparticulate structure along with possibilities to transfer the prepared nanomembranes to various substrates make them promising for new optical, plasmonic and electronic applications.

The interrelationships between the topological features, such as surface roughness deduced from atomic force microscopy (AFM), and wettability properties expressed by the contact angle of a water droplet on the surface of nanostructured wide bandgap oxide films prepared by spray pyrolysis are investigated for a wide range of compositions. A direct relationship between the surface roughness and the value of the contact angle was found for nanocomposite (In₂O₃)_1−x(MgO)_x, (In_1−xGa_x)₂O₃, and Zn_1−xMg_xO films, for which both the surface roughness and the contact angle increase with the increasing x-value. On the other hand, in ITO films doped with Ga, it was found that the surface roughness increases by increasing the Ga doping, while the contact angle decreases. Both the surface roughness and the contact angle proved to increase in Ga₂O₃ films when they were alloyed with Al₂O₃, similar to other nanocomposite films. An inverse relationship was revealed for a nanocomposite formed from Ga₂O₃ and SnO₂. The contact angle for a (Ga₂O₃)_0.75(SnO₂)_0.25 film was larger as compared to that of the Ga₂O₃ film, while the surface roughness was lower, similar to ITO films. The highest value of the contact angle equal to 128° was found for a (In₂O₃)_1−x(MgO)_x film with an x-value of 0.8, and the largest RMS roughness of 20 nm was showed by a Ga_1.75Al_0.25O₃ film. The optical properties of the prepared films were also analyzed from optical absorption spectroscopy, demonstrating their bandgap variation in the range of (4 to 4.85) eV, corresponding to the middle ultraviolet spectral range.